| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Willatzen, Morten
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2022On chain models for contact electrificationcitations
- 2021Piezoelectric tunability and topological insulator transition in a GaN/InN/GaN quantum-well devicecitations
- 2020Strain-engineered widely tunable perfect absorption angle in black phosphorus from first principlescitations
- 2017Acousto-optical phonon excitation in cubic piezoelectric slabs and crystal growth orientation effectscitations
- 2017Acousto-optical phonon excitation in cubic piezoelectric slabs and crystal growth orientation effectscitations
- 2017Pseudocanalization regime for magnetic dark-field hyperlensescitations
- 2015Tunable Broadband Acoustic Gain in Piezoelectric Semiconductors at ε-Near-Zero Responsecitations
- 2013Metadevices for the confinement of sound and broadband double-negativity behavior:Physical Review Bcitations
- 2013Metadevices for the confinement of sound and broadband double-negativity behaviorcitations
- 2013An electromechanical model for a dielectric electroactive polymer generatorcitations
- 2013An Electromechanical Model of a Dielectric ElectroActive Polymer Generatorcitations
- 2013An Electromechanical Model of a Dielectric ElectroActive Polymer Generatorcitations
- 2012Multilayer piezoelectric transducer models combined with Field IIcitations
- 2010Analysis of optical properties of strained semiconductor quantum dots for electromagnetically induced transparency
- 2010Analysis of optical properties of strained semiconductor quantum dots for electromagnetically induced transparency
- 2010Investigations of scattering and field enhancement effects in retardation-based plasmonic nanoantennas
- 2009Parameter sensitivity study of a Field II multilayer transducer model on a convex transducercitations
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article
Piezoelectric tunability and topological insulator transition in a GaN/InN/GaN quantum-well device
Abstract
<jats:title>Abstract</jats:title><jats:p>Using an 8-band <jats:inline-formula><jats:tex-math><?CDATA ${k}{p}$?></jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"><mml:mrow><mml:mrow><mml:mtext mathvariant="bold">k</mml:mtext></mml:mrow></mml:mrow><mml:mo>⋅</mml:mo><mml:mrow><mml:mrow><mml:mtext mathvariant="bold">p</mml:mtext></mml:mrow></mml:mrow></mml:math><jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="jpmaterabf7dcieqn1.gif" xlink:type="simple" /></jats:inline-formula> model it is demonstrated through the combination of strain and piezoelectricity that increasing the InN quantum-well thickness of a GaN-InN-GaN device changes the InN material from a positive bandgap semiconductor to a topological insulator (negative bandgap). Moderate strain tuning of a four monolayer InN layer for a GaN-InN-GaN device reveals a giant (one order of magnitude) tuning of current–voltage characteristics. It is verified that piezoelectricity plays an important role in controlling electron transport through the InN layer.</jats:p>