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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Theis, Wolfgang
University of Birmingham
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Radio frequency-assisted zirconium carbide matrix deposition for continuous fiber-reinforced ultra high temperature ceramic matrix compositescitations
- 2023Chemical kinetics of metal single atom and nanocluster formation on surfaces: An example of Pt on hexagonal Boron Nitridecitations
- 2023Chemical Kinetics of Metal Single Atom and Nanocluster Formation on Surfacescitations
- 2020Spectroscopic correlation of chalcogen defects in atomically thin MoS2(1−x)Se2x alloyscitations
- 2019On the synthesis of morphology-controlled transition metal dichalcogenides via chemical vapor deposition for electrochemical hydrogen generationcitations
- 2012Depth-dependent magnetism in epitaxial MnSb thin films: effects of surface passivation and cleaningcitations
- 2006Core and valence level photoemission and photoabsorption study of icosahedral Al-Pd-Mn quasicrystalscitations
- 2000Quasicrystalline valence bands in decagonal AlNiCocitations
Places of action
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article
Spectroscopic correlation of chalcogen defects in atomically thin MoS2(1−x)Se2x alloys
Abstract
<p>Engineering of atomically thin transition metal dichalcogenides (TMDs) is highly sought after for novel optoelectronic and spintronic devices. With the limited number of naturally existing TMDs, chalcogen based alloying has become a viable solution for developing TMDs for optical modulators and photovoltaics. Here, we report on detailed optical and microscopic studies of ternary TMD alloys of molybdenum, sulfur, and selenium grown via a single step method. The developed material has tunable band gaps in a broad range 1.5–1.9 eV with the variation in sulfur compositions. Further, the existence of trions, bi-excitons, and defect bound excitons are shown using temperature dependent (4 K−300 K) photoluminescence spectroscopy. A detailed analysis on MoS<sub>1.34</sub>Se<sub>0.66</sub> alloy system shows the evidence of new types of defect bound excitons originating at low temperatures along with the presence of bi-excitons having a binding energy of ∼41 meV. The prospects of defect induced quasiparticles are observed in scanning transmission electron microscope assisted analyses and verified using density functional theory calculations. The thermal conductivity values, calculated using micro-Raman studies, of MoS<sub>2</sub>, MoSe<sub>2</sub>, and MoS<sub>1.34</sub>Se<sub>0.66</sub> are found to be 69(±2) W m<sup>−</sup><sup>1</sup> K<sup>−</sup><sup>1</sup>, 33(±2) W m<sup>−</sup><sup>1</sup> K<sup>−</sup><sup>1</sup> and 17(±2) W m<sup>−</sup><sup>1</sup> K<sup>−</sup><sup>1</sup> respectively, in agreement with the theoretical predictions. Tunable optical properties of these ternary atomic layers along with moderate thermal conductivity reveal the potential of these layers in modern opto-electronic devices and sensors.</p>