| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Talbot, Etienne
Groupe de Physique des Matériaux
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2023Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser
- 2022Nano-composite MOx materials for NVMscitations
- 2019Growth and properties of doped silicon nanocrystals
- 2018Origin of Pr 3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigationscitations
- 2015Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameterscitations
- 2013Nanoscale evidence of erbium clustering in Er-doped silicon-rich silicacitations
- 2012Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicatescitations
Places of action
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article
Origin of Pr 3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigations
Abstract
Origin of Pr 3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigations To cite this article: Rémi Demoulin et al 2018 Nano Futures 2 035005 View the article online for updates and enhancements. Related content Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering L Khomenkova, X Portier, J Cardin et al.-High-k Hf-based layers grown by RF magnetron sputtering L Khomenkova, C Dufour, P-E Coulon et al.-XRD and EXAFS studies on the structure of Er3+-doped SiO2–HfO2 glass-ceramic waveguides: Er3+-activated HfO2 Abstract Structural, chemical, and luminescence properties of Pr 3+-doped HfSiO x layers fabricated by radio-frequency magnetron sputtering were examined as a function of annealing temperature. Phase separation between SiO 2 and HfO 2 as well as the location of Pr 3+ dopants were investigated using atom probe tomography and transmission electron microscopy while optical properties of Pr 3+ ions were studied using photoluminescence measurements. As a result, (i) we evidenced the location of the Pr 3+ dopants in the HfO 2 phase while the SiO 2 phase was discovered to be free of these dopants, (ii) the HfO 2 phase was identified to crystallize in the cubic phase until 1050 °C annealing, (iii) no Pr clusters were detected as function of annealing, and (iv) luminescence properties were discussed in regard to the location of Pr in the HfO 2 cubic phase.