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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Azevedo, Nuno Monteiro |
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Ramon, Eloi
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Publications (5/5 displayed)
- 2020Fabrication and Modeling of pn-Diodes Based on Inkjet-Printed Oxide Semiconductorscitations
- 2020Fabrication and modeling of pn-diodes based on inkjet printed oxide semiconductorscitations
- 2019Enhanced performance stability of iridium oxide-based pH sensors fabricated on rough inkjet-printed platinumcitations
- 2017Controlling the crack formation in inkjet-printed silver nanoparticle thin-films for high resolution patterning using intense pulsed light treatmentcitations
- 2017Inkjet printed metal insulator semiconductor (MIS) diodes for organic and flexible electronic applicationcitations
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article
Inkjet printed metal insulator semiconductor (MIS) diodes for organic and flexible electronic application
Abstract
All inkjet printed rectifying diodes based on a metal-insulator-semiconductor (MIS) layer stack are presented. The rectifying properties were optimized by careful selection of the insulator interlayer thickness and the layout structure. The different diode architectures based on the following materials are investigated: (1) silver/poly (methylmethacrylate-methacrylic acid)/polytriarylamine/silver, (2) silver/polytriarylamine/poly (methylmethacrylate-methacrylic acid)/silver, and (3) silver/poly (methylmethacrylate-methacrylic acid)/poly-triarylamine/poly(3, 4-ethylenedioxythiophene) poly (styrenesulfonate). The MIS diodes show an averaged rectification ratio of 200 and reasonable forward current density reaching 40 mA cm-2. They are suitable for a number of applications in flexible printed organic electronics.