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Rapljenović, Željko
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Publications (4/4 displayed)
- 2023The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannatecitations
- 2023The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannatecitations
- 2022The defect structure and electrical properties of the spark plasma sintered antimony-doped barium stannate
- 2020Origin of Mangetotransport Properties in APCVD Deposited Tin Oxide Thin Filmscitations
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article
The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
Abstract
<jats:title>Abstract</jats:title><jats:p>The influence of structural defects in spark plasma sintered BaSn<jats:sub>1-x</jats:sub>Sb<jats:sub>x</jats:sub>O<jats:sub>3</jats:sub> (BSSO, <jats:italic>x</jats:italic> = 0.00 and 0.08) ceramic samples on their electrical properties was investigated in the temperature range of 300–4 K. X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily oxygen vacancies (V<jats:sub>O</jats:sub>) and mixed oxidation states of tin (Sn<jats:sup>2+</jats:sup>/Sn<jats:sup>4+</jats:sup>) in both samples. As a result, the undoped BSSO sample exibited a non-standard semiconductor behavior, retaining its temperature-dependent resistivity. The electrical resistivity of the doped samples was two orders of magnitude lower than that of the undoped sample. The presence of structural defects such as V<jats:sub>O</jats:sub>, mixed oxidation states of the constituent elements, and significant amounts of O<jats:sup>−</jats:sup> species make the electrical resistivity of the doped sample constant in the temperature range of 300–70 K, indicating heavily-doped semiconductor behavior.</jats:p>