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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hughes, Greg
Dublin City University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Growth chemistry of cobalt nitride by plasma enhanced atomic layer depositioncitations
- 2021Analysing trimethylaluminum infiltration intopolymer brushes using a scalable area selectivevapor phase processcitations
- 2020A new method for assessing the utility of powder bed fusion (PBF) feedstock through lifecitations
- 2020Precise definition of a ‘monolayer point’ in polymer brush films for fabricating highly coherent TiO2 thin films by vapor phase Infiltrationcitations
- 2020A new method for assessing the recyclability of powders within Powder Bed Fusion processcitations
- 2019Surface characterization of poly-2-vinylpyridine-A polymer for area selective deposition techniquescitations
- 2019Surface characterization of Poly 2-Vinylpyridine - a polymer for area selective deposition techniquescitations
- 2016Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal annealcitations
- 2016A photoemission study of the effectiveness of nickel, manganese, and cobalt based corrosion barriers for silicon photo-anodes during water oxidationcitations
- 2014High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photo emissioncitations
- 2014High-temperature stability study of 1 nm Al2O3 deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopycitations
- 2009Electronic structure of the organic semiconductor copper tetraphenylporphyrin (CuTPP)citations
- 2008Electrical, structural, and chemical properties of HfO₂ films formed by electron beam evaporationcitations
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article
Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition
Abstract
<jats:title>Abstract</jats:title><jats:p>State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies. The growth process is characterised using an <jats:italic>in situ</jats:italic> cycle-by-cycle methodology to identify the main factors which underpin optimal material growth. The role of co-reactant dosing and substrate temperature is analysed in detail to demonstrate the impact these parameters have on the overall composition of the film. The <jats:italic>in situ</jats:italic> approach, combined with high-energy synchrotron-based photoemission studies of the resulting films, enables understanding of the bulk chemical properties without need for physical removal of material by sputtering. The results provide an insight into optimising plasma assisted ALD processes for deposition of cobalt nitride, and strategies for minimizing carbon incorporation into the film from the precursor ligands.</jats:p>