• Journet, Catherine
• Mele, David
• Toury, B.
• Steyer, P.
• Voisin, C.
• Baudin, Emmanuel
• Rosticher, M.
• Taniguchi, T.
• Pierret, A.
• Garnier, V.
• Palomo, J.
• Bocquillon, E.
• Graef, H.
• Berroir, J-M
• Placais, Bernard
• Fève, G.
• Loiseau, A.
• Li, Y.

Abstract

<jats:title>Abstract</jats:title><jats:p>In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10–100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant <jats:italic>ϵ</jats:italic><jats:sub>∥</jats:sub> = 3.4 ± 0.2 consistent with the theoretical prediction of Ohba <jats:italic>et al</jats:italic>, that narrows down the generally accepted window <jats:italic>ϵ</jats:italic><jats:sub>∥</jats:sub> = 3–4. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant <jats:italic>ϵ</jats:italic><jats:sub>∥</jats:sub> ≃ 3.1 and a trap energy Φ<jats:sub><jats:italic>B</jats:italic></jats:sub> ≃ 1.3 eV, that is comparable with standard technologically relevant dielectrics.</jats:p>

Topics

• impedance spectroscopy
• polymer
• dielectric constant
• nitride
• strength
• Boron