| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Journet, Catherine
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructurescitations
- 2024Two-step ALD process for non-oxide ceramic deposition: the example of boron nitridecitations
- 2024Two-step ALD process for non-oxide ceramic deposition : the example of boron nitride
- 2023One-dimensional hBN/CNT Van der Waals Heterostructures Fabricated by Atomic Layer Deposition
- 2022Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitridecitations
- 2022Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitridecitations
- 2022Laser-Induced Heating in GdVO 4 : Yb 3+ /Er 3+ Nanocrystals for Thermometrycitations
- 2021ALD of hexagonal Boron Nitride: towards h-BN/Carbon Van der Waals 1D heterostructures
- 2019Atomic layer deposition of stable 2D materialscitations
- 2019Advanced synthesis of highly crystallized hexagonal boron nitride by coupling polymer-derived ceramics and spark plasma sintering processes—influence of the crystallization promoter and sintering temperaturecitations
- 2019New atomic layer deposition (ALD) of boron nitride (BN) based on polymer derived ceramics route: Potentiality for complex nanostructure fabrication
- 2017A Novel Two-Step Ammonia-Free Atomic Layer Deposition Approach for Boron Nitridecitations
- 2017New carbon-hybrid nanoporous materials for enhanced hydrogen storage: synthesis and characterization
- 2016New carbon-hybrid nanoporous materials for enhanced hydrogen storage: synthesis and characterization
- 2012Carbon nanotube synthesis: from large-scale production to atom-by-atom growthcitations
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article
Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride
Abstract
<jats:title>Abstract</jats:title><jats:p>In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10–100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant <jats:italic>ϵ</jats:italic><jats:sub>∥</jats:sub> = 3.4 ± 0.2 consistent with the theoretical prediction of Ohba <jats:italic>et al</jats:italic>, that narrows down the generally accepted window <jats:italic>ϵ</jats:italic><jats:sub>∥</jats:sub> = 3–4. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant <jats:italic>ϵ</jats:italic><jats:sub>∥</jats:sub> ≃ 3.1 and a trap energy Φ<jats:sub><jats:italic>B</jats:italic></jats:sub> ≃ 1.3 eV, that is comparable with standard technologically relevant dielectrics.</jats:p>