Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2021The breakdown of Moore’s law induced by weak Anderson localization and by size effects in nano-scale metallic connectors7citations

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Munoz, Raul
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Herrera, Guillermo
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Muñoz, Enrique
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2021

Co-Authors (by relevance)

  • Munoz, Raul
  • Herrera, Guillermo
  • Muñoz, Enrique
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article

The breakdown of Moore’s law induced by weak Anderson localization and by size effects in nano-scale metallic connectors

  • Munoz, Raul
  • Arenas, Claudio
  • Herrera, Guillermo
  • Muñoz, Enrique
Abstract

<jats:title>Abstract</jats:title><jats:p>We report the resistivity measured at temperatures between 5 K and 300 K of a Cu film 63 nm thick with grains that have a diameter d = 10.5 nm on the average. The resistivity of this film is described by the first quantum theory of resistivity of nano-scale metallic connectors [R C Munoz <jats:italic>et al</jats:italic>, App. Phys. Rev. <jats:bold>4</jats:bold> (2017) 011102]. We also report an improved version of this theory that includes a new analytical description of the effect of grain boundary disorder on electron transport. We employ the surface roughness and grain size distribution measured on this Cu film as input data to compute, using our heory, the room temperature resistivity of Cu wires of rectangular cross section, and compare with the resistivity of these wires reported in the literature [M H Van der Veen <jats:italic>et al</jats:italic>, 2018 IEEE International Interconnect Technology Conference (IITC) (2018)], that are used for designing Integrated Circuits (IC) for the 14 nm, 10 nm, 7 nm, 5 nm, 3 nm and 2 nm nodes, respectively. The quantum theory predicts an increase in resistivity with diminishing wire dimensions that accurately agrees with the room temperature resistivity measured on these Cu wires. The resistivity induced by electron-rough surface scattering accounts for about half of the increase over the bulk observed in the 3 nm and 2 nm tech node; scattering by non-uniform grain boundaries contributes the remaining increase in resistivity—the latter is responsible for the weak Anderson localization. According to the description of electron motion furnished by this improved quantum theory, the break down of Moore’s law with shrinking wire dimensions is to be expected, since it <jats:italic>originates from size effects triggered by electron scattering with rough surfaces and scattering by non-equally spaced grain boundaries, which become dominant as the dimensions of the metallic wire shrinks.</jats:italic></jats:p>

Topics
  • impedance spectroscopy
  • surface
  • grain
  • resistivity
  • grain size
  • grain boundary
  • theory
  • wire
  • ion chromatography