| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kiazadeh, Asal
Universidade Nova de Lisboa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applicationscitations
- 2024Inkjet printed IGZO memristors with volatile and non-volatile switchingcitations
- 2021Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxidecitations
- 2021Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxidecitations
- 20202D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodescitations
- 2019Electrochemical metallization ReRAMs (ECM) - Experiments and modellingcitations
- 2019Flexible and transparent ReRAM devices for system on panel (SOP) applicationcitations
- 2017Memristors using solution-based IGZO nanoparticlescitations
- 2017Memristors Using Solution-Based IGZO Nanoparticlescitations
- 2016Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistorscitations
- 2016UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistorscitations
- 2016FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs
- 2016Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interfacecitations
- 2013Fabrication and characterization of memory devices based on nanoparticles
- 2012Electroforming process in metal-oxide-polymer resistive switching memories
Places of action
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article
Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interface
Abstract
The reduction of aCu2O layer on copper by exposure toTMAduring the atomic layer deposition of Al2O3 has recently been reported. (Gharachorlou et al 2015 ACS Appl. Mater. Interfaces 7 16428-16439). The study presented here analyzes a similar process, leading to the reduction of a homogeneous Cu2O thin film, which allows for additional observations. Angle-resolved in situ X-ray photoelectron spectroscopy confirms the localization of metallic copper at the interface. The evaluation of binding energy shifts reveals the formation of aCu2O/Cu Schottky barrier, which gives rise to Fermi level pinning in Cu2O. An initial enhancement of the ALD growth per cycle (GPC) is only observed for bulk Cu2O samples and is thus related to lattice oxygen, originating from regions lying deeper than just the first few layers of the surface. The oxygen out-take from the substrate is limited to the first few cycles, which is found to be due to a saturated copper reduction, rather than the oxygen diffusion barrier of Al2O3.