| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Klein, Andreas
Technical University of Darmstadt
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024A Single Model for the Thermodynamics and Kinetics of Metal Exsolution from Perovskite Oxidescitations
- 2024High open-circuit voltage in single-crystalline n-type SnS/MoO₃ photovoltaics
- 2022Electronic and chemical properties of nickel oxide thin films and the intrinsic defects compensation mechanismcitations
- 2022Electroless Nanoplating of Pd−Pt Alloy Nanotube Networks: Catalysts with Full Compositional Control for the Methanol Oxidation Reaction
- 2021Chemical interaction of Na with cleaved (011) surfaces of CuInSe₂
- 2021Modification of energy band alignment and electric properties of Pt/Ba₀.₆Sr₀.₄TiO₃/Pt thin-film ferroelectric varactors by Ag impurities at interfaces
- 2021Energy level alignment and electrical properties of (Ba,Sr)TiO₃/Al₂O₃ interfaces for tunable capacitors
- 2021Piezotronic effect at Schottky barrier of a metal-ZnO single crystal interface
- 202112% efficient CdTe/CdS thin film solar cells deposited by low-temperature close space sublimation
- 2021Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels
- 2021Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers
- 2021Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces
- 2021Highly oriented layers of the three‐dimensional semiconductor CdTe on the two‐dimensional layered semiconductors MoTe₂ and WSe₂
- 2021Highly conductive grain boundaries in copper oxide thin films
- 2021Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)
- 2021Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfacescitations
- 2020Fermi level engineering for large permittivity in BaTiO3-based multilayerscitations
- 2019Nickel oxide selectively deposited on the {101} facet of anatase TiO2 nanocrystal bipyramids for enhanced photocatalysiscitations
- 2018Supercritical CO2-assisted deposition of NiO on (101)-anatase-TiO2 for efficient facet engineered photocatalystscitations
- 2017High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigationcitations
- 2016Highly conductive grain boundaries in copper oxide thin filmscitations
- 2016Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interfacecitations
- 2013Transparent Conducting Oxides: Electronic Structure-Property Relationship from Photoelectron Spectroscopy with in situ Sample Preparationcitations
- 2010Surface energy controlled preferential orientation of thin filmscitations
- 2009Influence of sputter deposition parameters on the properties of tunable barium strontium titanate thin films for microwave applicationscitations
Places of action
| Organizations | Location | People |
|---|
article
Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interface
Abstract
The reduction of aCu2O layer on copper by exposure toTMAduring the atomic layer deposition of Al2O3 has recently been reported. (Gharachorlou et al 2015 ACS Appl. Mater. Interfaces 7 16428-16439). The study presented here analyzes a similar process, leading to the reduction of a homogeneous Cu2O thin film, which allows for additional observations. Angle-resolved in situ X-ray photoelectron spectroscopy confirms the localization of metallic copper at the interface. The evaluation of binding energy shifts reveals the formation of aCu2O/Cu Schottky barrier, which gives rise to Fermi level pinning in Cu2O. An initial enhancement of the ALD growth per cycle (GPC) is only observed for bulk Cu2O samples and is thus related to lattice oxygen, originating from regions lying deeper than just the first few layers of the surface. The oxygen out-take from the substrate is limited to the first few cycles, which is found to be due to a saturated copper reduction, rather than the oxygen diffusion barrier of Al2O3.