| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sun, Zhipei
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2023Deterministic Polymorphic Engineering of MoTe2 for Photonic and Optoelectronic Applicationscitations
- 2023Deterministic Polymorphic Engineering of MoTe2 for Photonic and Optoelectronic Applicationscitations
- 2023Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistorscitations
- 2023Effects of atomic layer deposition on the optical properties of two-dimensional transition metal dichalcogenide monolayerscitations
- 2020Potential for sub-mm long erbium-doped composite silicon waveguide DFB laserscitations
- 2018Inkjet Printed Large-Area Flexible Few-Layer Graphene Thermoelectricscitations
Places of action
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article
Effects of atomic layer deposition on the optical properties of two-dimensional transition metal dichalcogenide monolayers
Abstract
<jats:title>Abstract</jats:title><jats:p>Two-dimensional semiconducting transition metal dichalcogenides (TMDs) have attracted significant interest due to their unique optoelectronic properties. More often, these materials are enclosed inside a dielectric layer that can work as an insulator for field-effect transistors. The insulating layer is typically grown with atomic layer deposition (ALD). Here, we study the effects on bare and hBN-covered monolayer MoS<jats:sub>2</jats:sub> and WSe<jats:sub>2</jats:sub> flakes with ALD TiO<jats:sub>2</jats:sub> films. Our results reveal a significant shift and decrease in intensity in photoluminescence and Raman signals of the monolayer TMDs. Further analysis suggests that these changes are caused by chemical doping, strain, and dielectric screening after the ALD. Our study not only sheds light on the impact of ALD on the properties of TMDs, but also indicates ALD can be an alternative method to engineer the doping, strain and dielectric environment for potential optoelectronics and photonics applications.</jats:p>