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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Seppänen, Heli
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2023Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
- 2023Effects of atomic layer deposition on the optical properties of two-dimensional transition metal dichalcogenide monolayerscitations
- 2021Atomic layer deposition of AlN using atomic layer annealing - Towards high-quality AlN on vertical sidewallscitations
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2019Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Depositioncitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
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article
Effects of atomic layer deposition on the optical properties of two-dimensional transition metal dichalcogenide monolayers
Abstract
<jats:title>Abstract</jats:title><jats:p>Two-dimensional semiconducting transition metal dichalcogenides (TMDs) have attracted significant interest due to their unique optoelectronic properties. More often, these materials are enclosed inside a dielectric layer that can work as an insulator for field-effect transistors. The insulating layer is typically grown with atomic layer deposition (ALD). Here, we study the effects on bare and hBN-covered monolayer MoS<jats:sub>2</jats:sub> and WSe<jats:sub>2</jats:sub> flakes with ALD TiO<jats:sub>2</jats:sub> films. Our results reveal a significant shift and decrease in intensity in photoluminescence and Raman signals of the monolayer TMDs. Further analysis suggests that these changes are caused by chemical doping, strain, and dielectric screening after the ALD. Our study not only sheds light on the impact of ALD on the properties of TMDs, but also indicates ALD can be an alternative method to engineer the doping, strain and dielectric environment for potential optoelectronics and photonics applications.</jats:p>