Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (5/5 displayed)

  • 2024Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers2citations
  • 2024Resonant Band Hybridization in Alloyed Transition Metal Dichalcogenide Heterobilayers.citations
  • 2023Strong Coupling of Coherent Phonons to Excitons in Semiconducting Monolayer MoTe224citations
  • 2021Strong exciton-photon coupling in large area MoSe2 and WSe2 heterostructures fabricated from two-dimensional materials grown by chemical vapor deposition14citations
  • 2015Very low roughness MAPLE-deposited films of a light emitting polymer: an alternative to spin coating9citations

Places of action

Chart of shared publication
Taniguchi, Takashi
2 / 58 shared
Alexeev, Evgeny M.
2 / 4 shared
Louca, Charalambos
2 / 3 shared
Falko, Vladimir
2 / 11 shared
Ruiztijerina, David A.
1 / 1 shared
Catanzaro, Alessandro
2 / 3 shared
Pisoni, Riccardo
2 / 2 shared
Hague, Lee
2 / 5 shared
Ensslin, Klauss
1 / 1 shared
Watanabe, Kenji
2 / 49 shared
Kozikov, Aleksey
2 / 6 shared
Sortino, Luca
2 / 3 shared
Gillard, Daniel J.
2 / 4 shared
Tartakovskii, Alexander I.
3 / 9 shared
Novoselov, Kostya S.
2 / 26 shared
Ruiz-Tijerina, David A.
1 / 1 shared
Ensslin, Klaus
1 / 4 shared
Molina-Sanchez, Alejandro
1 / 3 shared
Khaustov, Vladislav O.
1 / 3 shared
Sangalli, Davide
1 / 3 shared
Cerullo, Giulio
1 / 17 shared
Trovatello, Chiara
1 / 3 shared
Gadermaier, Christoph
1 / 2 shared
Sayers, Charles J.
1 / 2 shared
Coletti, Camilla
1 / 24 shared
Conte, Stefano Dal
1 / 3 shared
Cervantes-Villanueva, Jorge
1 / 1 shared
Gillard, Daniel
1 / 2 shared
Millard, Toby Severs
1 / 1 shared
Jang, A-Rang
1 / 2 shared
Georgiou, Kyriacos
1 / 2 shared
Lidzey, David G.
1 / 7 shared
Jayaprakash, Rahul
1 / 4 shared
Shin, Hyeon Suk
1 / 5 shared
Trichet, Aurélien
1 / 1 shared
Smith, Jason M.
1 / 3 shared
Ahn, Seongjoon
1 / 1 shared
Caricato, Anna Paola
1 / 16 shared
Massafra, Andrea
1 / 1 shared
Leo, Chiara
1 / 1 shared
Cesaria, Maura
1 / 5 shared
Gigli, Giuseppe
1 / 28 shared
Martino, Maurizio
1 / 14 shared
Carallo, S.
1 / 7 shared
Tunno, Tiziana
1 / 1 shared
Mazzeo, Marco
1 / 2 shared
Chart of publication period
2024
2023
2021
2015

Co-Authors (by relevance)

  • Taniguchi, Takashi
  • Alexeev, Evgeny M.
  • Louca, Charalambos
  • Falko, Vladimir
  • Ruiztijerina, David A.
  • Catanzaro, Alessandro
  • Pisoni, Riccardo
  • Hague, Lee
  • Ensslin, Klauss
  • Watanabe, Kenji
  • Kozikov, Aleksey
  • Sortino, Luca
  • Gillard, Daniel J.
  • Tartakovskii, Alexander I.
  • Novoselov, Kostya S.
  • Ruiz-Tijerina, David A.
  • Ensslin, Klaus
  • Molina-Sanchez, Alejandro
  • Khaustov, Vladislav O.
  • Sangalli, Davide
  • Cerullo, Giulio
  • Trovatello, Chiara
  • Gadermaier, Christoph
  • Sayers, Charles J.
  • Coletti, Camilla
  • Conte, Stefano Dal
  • Cervantes-Villanueva, Jorge
  • Gillard, Daniel
  • Millard, Toby Severs
  • Jang, A-Rang
  • Georgiou, Kyriacos
  • Lidzey, David G.
  • Jayaprakash, Rahul
  • Shin, Hyeon Suk
  • Trichet, Aurélien
  • Smith, Jason M.
  • Ahn, Seongjoon
  • Caricato, Anna Paola
  • Massafra, Andrea
  • Leo, Chiara
  • Cesaria, Maura
  • Gigli, Giuseppe
  • Martino, Maurizio
  • Carallo, S.
  • Tunno, Tiziana
  • Mazzeo, Marco
OrganizationsLocationPeople

article

Strong exciton-photon coupling in large area MoSe2 and WSe2 heterostructures fabricated from two-dimensional materials grown by chemical vapor deposition

  • Gillard, Daniel
  • Millard, Toby Severs
  • Jang, A-Rang
  • Genco, Armando
  • Georgiou, Kyriacos
  • Lidzey, David G.
  • Jayaprakash, Rahul
  • Shin, Hyeon Suk
  • Tartakovskii, Alexander I.
  • Trichet, Aurélien
  • Smith, Jason M.
  • Ahn, Seongjoon
Abstract

<jats:title>Abstract</jats:title><jats:p>Two-dimensional semiconducting transition metal dichalcogenides embedded in optical microcavities in the strong exciton-photon coupling regime may lead to promising applications in spin and valley addressable polaritonic logic gates and circuits. One significant obstacle for their realization is the inherent lack of scalability associated with the mechanical exfoliation commonly used for fabrication of two-dimensional materials and their heterostructures. Chemical vapor deposition offers an alternative scalable fabrication method for both monolayer semiconductors and other two-dimensional materials, such as hexagonal boron nitride. Observation of the strong light-matter coupling in chemical vapor grown transition metal dichalcogenides has been demonstrated so far in a handful of experiments with monolayer molybdenum disulfide and tungsten disulfide. Here we instead demonstrate the strong exciton-photon coupling in microcavities composed of large area transition metal dichalcogenide/hexagonal boron nitride heterostructures made from chemical vapor deposition grown molybdenum diselenide and tungsten diselenide encapsulated on one or both sides in continuous few-layer boron nitride films also grown by chemical vapor deposition. These transition metal dichalcogenide/hexagonal boron nitride heterostructures show high optical quality comparable with mechanically exfoliated samples, allowing operation in the strong coupling regime in a wide range of temperatures down to 4 Kelvin in tunable and monolithic microcavities, and demonstrating the possibility to successfully develop large area transition metal dichalcogenide based polariton devices.</jats:p>

Topics
  • impedance spectroscopy
  • molybdenum
  • experiment
  • semiconductor
  • nitride
  • Boron
  • two-dimensional
  • tungsten
  • chemical vapor deposition