| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vergnaud, Céline
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2024Precision defect integrated graphene as reliable support membrane for high-resolution cryo-transmission electron microscopy
- 2024Two-dimensional to bulk crossover of the WSe2 electronic band structure
- 2022Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Control of spin–charge conversion in van der Waals heterostructurescitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Sicitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Sicitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2017Imaging spin diffusion in germanium at room temperaturecitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2012Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Bandcitations
Places of action
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article
Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Si
Abstract
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe2 mono-and multi-layers on SiO2/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO2/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe2 monolayers over 1 cm(2). To grow MoSe2 multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe2 monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe2 multilayers over 1 cm(2). Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10% of Mn in MoSe2 bilayers.