| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Journet, Catherine
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructurescitations
- 2024Two-step ALD process for non-oxide ceramic deposition: the example of boron nitridecitations
- 2024Two-step ALD process for non-oxide ceramic deposition : the example of boron nitride
- 2023One-dimensional hBN/CNT Van der Waals Heterostructures Fabricated by Atomic Layer Deposition
- 2022Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitridecitations
- 2022Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitridecitations
- 2022Laser-Induced Heating in GdVO 4 : Yb 3+ /Er 3+ Nanocrystals for Thermometrycitations
- 2021ALD of hexagonal Boron Nitride: towards h-BN/Carbon Van der Waals 1D heterostructures
- 2019Atomic layer deposition of stable 2D materialscitations
- 2019Advanced synthesis of highly crystallized hexagonal boron nitride by coupling polymer-derived ceramics and spark plasma sintering processes—influence of the crystallization promoter and sintering temperaturecitations
- 2019New atomic layer deposition (ALD) of boron nitride (BN) based on polymer derived ceramics route: Potentiality for complex nanostructure fabrication
- 2017A Novel Two-Step Ammonia-Free Atomic Layer Deposition Approach for Boron Nitridecitations
- 2017New carbon-hybrid nanoporous materials for enhanced hydrogen storage: synthesis and characterization
- 2016New carbon-hybrid nanoporous materials for enhanced hydrogen storage: synthesis and characterization
- 2012Carbon nanotube synthesis: from large-scale production to atom-by-atom growthcitations
Places of action
| Organizations | Location | People |
|---|
article
Atomic layer deposition of stable 2D materials
Abstract
Following the graphene isolation, strong interest in two dimensional (2D) materials has been driven by their outstanding properties. Their typical intrinsic structure, including strong in-plane covalent bonding and weak out-of-plane Van der Waals interaction, makes them highly promising in diverse areas such as electronics, catalysis, and environment. Growth of 2D materials requires a synthesis approach able to control the deposition onto a support at the atomic scale. Thanks to their simplicity, versatility and ability to control thickness at the angstrom level, Atomic Layer Deposition (ALD) and its variant Atomic Layer Etching (ALET) appear as ones of the most suited techniques to synthesize 2D materials. The development of ALD technique for fabricating 2D materials in the last ten years justifies reviewing its most recent groundbreaking discoveries and progresses. Particular attention will be paid to stable 2D materials especially graphene, h-BN, Mo and W dichalcogenides and few monolayered metal oxides. Specificities and outputs of ALD for 2D material as well as emerging directions and remaining technical challenges will be highlighted.