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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Ibrahim, Fatima
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2024Large chiral orbital texture and orbital Edelstein effect in Co/Al heterostructurecitations
- 2018Cu Metal/Mn Phthalocyanine Organic Spinterfaces atop Co with High Spin Polarization at Room Temperaturecitations
- 2018Cu Metal/Mn Phthalocyanine Organic Spinterfaces atop Co with High Spin Polarization at Room Temperaturecitations
- 2017Tailoring magnetic insulator proximity effects in graphene : First-principles calculations
- 2017Tailoring magnetic insulator proximity effects in graphene: first-principles calculationscitations
- 2015Spin-Dependent Hybridization between Molecule and Metal at Room Temperature through Inter layer Exchange Couplingcitations
- 2014Theoretical study of electronic structure and magnetism in materials for spintronics ; Etude théorique de la structure électronique et magnétique des matériaux pour la spintronique
- 2014Theoretical study of electronic structure and magnetism in materials for spintronics
- 2013Direct observation of a highly spin-polarized organic spinterface at room temperaturecitations
- 2012Effects of iron concentration and cationic site disorder on the optical properties of magnetoelectric gallium ferrite thin filmscitations
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article
Tailoring magnetic insulator proximity effects in graphene: first-principles calculations
Abstract
We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). The obtained exchange-splitting in graphene varies from tens to hundreds of meV depending on substrates. We find an electron doping to graphene induced by YIG and europium chalcogenides substrates, that shift the Fermi level above the Dirac cone up to 0.78 eV and 1.3 eV respectively, whereas hole doping shifts the Fermi level down below the Dirac cone about 0.5 eV in graphene/CFO. Furthermore, we study the variation of the extracted exchange and tight-binding parameters as a function of the EuO and EuS thicknesses. We show that those parameters are robust to thickness variation such that a single monolayer of magnetic insulator can induce a strong magnetic proximity effect on graphene. Those findings pave the way towards possible engineering of graphene spin-gating by proximity effect especially in view of recent experimental advancements.