| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chshiev, Mairbek
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2024Large chiral orbital texture and orbital Edelstein effect in Co/Al heterostructurecitations
- 2023From Early Theories of Dzyaloshinskii–Moriya Interactions in Metallic Systems to Today’s Novel Roadscitations
- 2020Low‐Energy Spin Precession in the Molecular Field of a Magnetic Thin Filmcitations
- 2018Significant Dzyaloshinskii–Moriya interaction at graphene–ferromagnet interfaces due to the Rashba effectcitations
- 2018Large-Voltage Tuning of Dzyaloshinskii–Moriya Interactions: A Route toward Dynamic Control of Skyrmion Chiralitycitations
- 2018Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Atomic-Layer Stacking, Insulator Capping and Electric Fieldcitations
- 2017Tailoring magnetic insulator proximity effects in graphene : First-principles calculations
- 2017Modeling anisotropic magnetoresistance in layered antiferromagnetscitations
- 2017Tailoring magnetic insulator proximity effects in graphene: first-principles calculationscitations
- 2016Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt−Graphene Heterostructurescitations
- 2016Direct evidence for minority spin gap in the Co 2 MnSi Heusler compoundcitations
- 2015Graphene spintronics:The European Flagship perspectivecitations
- 2015Graphene spintronics: the European Flagship perspective
- 2015Graphene spintronics: the European Flagship perspectivecitations
- 2015Graphene spintronicscitations
- 2013Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barrierscitations
- 2012Air-Protected Epitaxial Graphene/Ferromagnet Hybrids Prepared by Chemical Vapor Deposition and Intercalationcitations
Places of action
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article
Tailoring magnetic insulator proximity effects in graphene: first-principles calculations
Abstract
We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). The obtained exchange-splitting in graphene varies from tens to hundreds of meV depending on substrates. We find an electron doping to graphene induced by YIG and europium chalcogenides substrates, that shift the Fermi level above the Dirac cone up to 0.78 eV and 1.3 eV respectively, whereas hole doping shifts the Fermi level down below the Dirac cone about 0.5 eV in graphene/CFO. Furthermore, we study the variation of the extracted exchange and tight-binding parameters as a function of the EuO and EuS thicknesses. We show that those parameters are robust to thickness variation such that a single monolayer of magnetic insulator can induce a strong magnetic proximity effect on graphene. Those findings pave the way towards possible engineering of graphene spin-gating by proximity effect especially in view of recent experimental advancements.