| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Demenev, Evgeny
Fondazione Bruno Kessler
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024The XGIS instrument on-board THESEUS: detector principle and read-out electronics
- 2019Development of MEMS MOS gas sensors with CMOS compatible PECVD inter-metal passivationcitations
- 2018Formates for green catalytic reductions via CO2hydrogenation, mediated by magnetically recoverable catalystscitations
- 2014GIXRF characterization of thin Ge1-xSnx films
- 2014Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Development of nano-topography during SIMS characterization of Ge1-xSnx alloy
- 2014Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls
- 2013Dynamic SIMS Characterization of Ge1-xSnx alloy
- 2012Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealingcitations
- 2012Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layerscitations
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article
The XGIS instrument on-board THESEUS: detector principle and read-out electronics
Abstract
<jats:title>Abstract</jats:title><jats:p>The functionality and experimental performance characterization of the latest four channel version of ORION ASIC, a very low noise multichip read out and processing electronics customized for the X and Gamma Imaging Spectrometer (XGIS) instrument onboard the Transient High-Energy Sky and Early Universe Surveyor (THESEUS) mission, is presented. XGIS is a set of two coded-masked wide field deep sky cameras using monolithic SDDs (Silicon Drift Detectors) and CsI:Tl (Thallium doped-Cesium Iodide) scintillator-based X-γ ray detectors. This paper highlights the design, working principle and the expected performances of the XGIS, on a small scale 2×2 prototype. Furthermore, the evolution timeline of different versions of ORION with detailed performance observations and analysis for spectroscopic resolution, electronic noise and the operational linear energy ranges of both X and the γ processors of the four-pixel ASIC version bonded to a 2×2 SDD array are emphasized. Each 2×2 SDD array element is electrically and dimensionally equivalent to single elements of the THESEUS 8×8 SDD array.</jats:p>