693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rodriguez, Jean-Baptiste
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024III-V/Si epitaxial growth and antiphase domains: a matter of symmetry
- 2024Kinetic Monte Carlo simulation of GaAs growth on (001) Silicon
- 2024Understanding III-V/Si Heteroepitaxy: Experiments and Theory
- 2022Mid-infrared III–V semiconductor lasers epitaxially grown on Si substratescitations
- 2022Mid-infrared III–V semiconductor lasers epitaxially grown on Si substratescitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2021GaSb-based laser diodes grown on MOCVD GaAs-on-Si templatescitations
- 2021GaSb-based laser diodes grown on MOCVD GaAs-on-Si templatescitations
- 2021Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2020Zinc-blende group III-V/group IV epitaxy: Importance of the miscutcitations
- 2020Mid-infrared laser diodes epitaxially grown on on-axis (001) siliconcitations
- 2019The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substratescitations
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor depositioncitations
- 2015Terahertz studies of 2D and 3D topological transitions
- 2014Silicon-based photonic integration beyond the telecommunication wavelength rangecitations
- 2014Mid-IR heterogeneous silicon photonicscitations
- 2013Integrated thin-film GaSb-based Fabry-Perot lasers: towards a fully integrated spectrometer on a SOI waveguide circuitcitations
Places of action
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conferencepaper
Terahertz studies of 2D and 3D topological transitions
Abstract
We report terahertz measurements on bulk HgCdTe crystals at the semiconductor- to-semimetal topological transition and InAs/GaSb inverted band structure quantum well. We show that physical parameters of these narrow gap systems driven in specific topological phases can be efficiently extracted by means of terahertz photoconductivity studies.