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| Naji, M. |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Alshaaer, Mazen | Brussels |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Azevedo, Nuno Monteiro |
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Texier, Michael
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Publications (7/7 displayed)
- 2024Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mappingcitations
- 2024Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mappingcitations
- 2018Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe
- 2017Piezoelectric response and electrical properties of Pb(Zr 1-x Ti x )O 3 thin films: The role of imprint and compositioncitations
- 2013Evidence of perfect dislocation glide in nanoindented 4H-SiCcitations
- 2009Defects created in N-doped 4H-SiC by flexion in the brittle regime: Stacking fault multiplicity and dislocation cores.citations
- 2007Al-Pd-Mn icosahedral quasicrystal: deformation mechanisms in the brittle domain.citations
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article
Evidence of perfect dislocation glide in nanoindented 4H-SiC
Abstract
Plastic deformation of a 4H-SiC wafer has been produced by nanoindentation at room temperature. The superficial layer of the specimen in the indented area has been lifted out thanks to a specific focussed ion beam micromachining method and the deformation microstructure close to the imprints has been investigated by means of both conventional and high-resolution transmission electron microscopy (TEM). The analysis of the images revealed the presence of various types of extended defects. Perfect dislocations and single stacking faults bounded by isolated Shockley partial dislocations have been observed on the basal plane. Perfect dislocations have also been evidenced out of the basal plane. These results highlight the competition between various activated systems involved during the plastic deformation of 4H-SiC in the brittle regime.