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| Naji, M. |
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Walther, Thomas
University of Sheffield
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Think outside the boxcitations
- 2022Long-Term Outcomes after Aortic Valve and Root Replacement in a Very High-Risk Populationcitations
- 2021Identity of the local and macroscopic dynamic elastic responses in supercooled 1-propanolcitations
- 2017Impact of buffer gas quenching on the 1S0 → 1P1 ground-state atomic transition in nobeliumcitations
- 2017Study of phase separation in an InGaN alloy by electron energy loss spectroscopy in an aberration corrected monochromated scanning transmission electron microscopecitations
- 2017Impact of buffer gas quenching on the $^1S_0 → ^1P_1$ ground-state atomic transition in nobeliumcitations
- 2017Impact of buffer gas quenching on the $^1S_0$ $to$ $^1P_1$ ground-state atomic transition in nobeliumcitations
- 2014A laser locked Fabry-Perot etalon with 3 cm/s stability for spectrograph calibrationcitations
- 2012Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEMcitations
- 2012Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEMcitations
- 2011Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layerscitations
- 2010Electron microscopy of AlGaN-based multilayers for UV laser devices
- 2006Microstructural analysis of lignocellulosic fiber networkscitations
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article
Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEM
Abstract
This work presents an investigation of the thickness, the chemical composition and the band-gap properties of AlGaN/GaN quantum wells grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on sapphire (0001) substrates. Various methods of analysis by transmission electron microscopy (TEM) were used for the characterization of these layers, such as scanning transmission electron microscopy STEM, energy-dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). Annular dark-field STEM provides more accurate layer thicknesses and Al concentrations than EDXS profiling.