693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Wang, Tao
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024A dual strategy to enhance the photoelectric performance of Perovskite-Based photodetectors for potential applications in optical communicationscitations
- 2024Influence of the γ/γ′ Misfit on the Strain-Age Cracking Resistance of High-γ′ Ni and CoNi Superalloys for Additive Manufacturing
- 2022Effect of vertical electromagnetic stirring on solute distribution in billet continuous casting processcitations
- 2021Numerical Simulation of Macrosegregation Formation in a 2.45 ton Steel Ingot Using a Three-Phase Equiaxed Solidification Modelcitations
- 2021Integrating van der Waals materials on paper substrates for electrical and optical applicationscitations
- 2020Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrayscitations
- 2020Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112ˉ0) GaN
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2020Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaNcitations
- 2019Life-cycle assessment of emerging CO2 mineral carbonation-cured concrete blocks: Comparative analysis of CO2 reduction potential and optimization of environmental impactscitations
- 2018Dynamic behaviour of sub- m particles in dielectric liquids under DC stress
- 2017Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56citations
- 2017Observation of spin-orbit effects with spin rotation symmetrycitations
- 2015Evaluation of the Impact of Non-Inherited Maternal Antigens on the Outcome of HLA Mismatched Unrelated Donor Hematopoietic Stem Cell Transplantation for Hematological Malignancies on Behalf of the ALWP of the EBMT and the CIBMTR
- 2015Large scale Molecular Dynamics simulation of microstructure formation during thermal spraying of pure coppercitations
- 2012Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEMcitations
- 2012Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEMcitations
- 2010Electron microscopy of AlGaN-based multilayers for UV laser devices
Places of action
| Organizations | Location | People |
|---|
article
Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEM
Abstract
This work presents an investigation of the thickness, the chemical composition and the band-gap properties of AlGaN/GaN quantum wells grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on sapphire (0001) substrates. Various methods of analysis by transmission electron microscopy (TEM) were used for the characterization of these layers, such as scanning transmission electron microscopy STEM, energy-dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). Annular dark-field STEM provides more accurate layer thicknesses and Al concentrations than EDXS profiling.