| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Fernandes, P. A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2023Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporationcitations
- 2023Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technologycitations
- 2023Low energy muon study of the p-n interface in chalcopyrite solar cells
- 2021Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3: Culprits and benefitscitations
- 2018Optical Lithography Patterning of SiO<sub>2</sub> Layers for Interface Passivation of Thin Film Solar Cellscitations
- 2018Insulator Materials for Interface Passivation of Cu(In,Ga)Se-2 Thin Filmscitations
- 2018Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors
- 2014Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin filmscitations
- 2013Cu2ZnSnS4 absorber layers obtained through sulphurization of metallic precursors: Graphite box versus sulphur fluxcitations
- 2011Study of polycrystalline Cu2ZnSnS4 films by Raman scatteringcitations
- 2011Study of optical and structural properties of Cu2ZnSnS4 thin filmscitations
- 2010A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursorscitations
- 2010A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursorscitations
- 2010Influence of selenization pressure on the growth of Cu2ZnSnSe4 films from stacked metallic layerscitations
- 2009Precursors’ order effect on the properties of sulfurized Cu2ZnSnS4 thin filmscitations
Places of action
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document
Low energy muon study of the p-n interface in chalcopyrite solar cells
Abstract
The slow muon technique was used to study the p-n junction of chalcopyrite solar cells. A defect layer near the interface was identified and the passivation of the defects by buffer layers was studied. Several cover layers on top of the chalcopyrite Cu(In,Ga)Se2 (CIGS) semiconductor absorber were investigated in this work, namely CdS, ZnSnO, Al2O3 and SiO2. Quantitative results were obtained: The defect layer extends about 50 nm into the CIGS absorber, the relevant disturbance is strain in the lattice, and CdS provides the best passivation, oxides have a minor effect. In the present contribution, specific aspects of the low-energy muon technique in connection with this research are discussed.