• Kundu, Souvik
• Wani, Waseem Ahmad
• Ramaswamy, Kannan
• Venkataraman, B. Harihara
• Naaz, Nilofar

Abstract

<jats:title>Abstract</jats:title><jats:p>BiFeO<jats:sub>3</jats:sub> (BFO) and Mn-doped BFO thin films are prepared on indium tin oxide/glass substrates using wet chemical deposition technique. The role of Mn defects (3% to 10%) on the leakage current density and other physical properties of BFO thin film devices is investigated. The X-ray diffraction patterns confirm the single-phase formation of rhombohedrally distorted BFO thin films. The scanning electron microscopy images approve uniform and crack-free film depositions, which is of great importance to the practical device applications of such materials. The oxidation states are determined by X-ray photoelectron spectroscopy (XPS). These XPS results reveal the presence of multiple valence states of Fe ions (Fe<jats:sup>2+</jats:sup>, Fe<jats:sup>3+</jats:sup>) and Mn (Mn<jats:sup>3+</jats:sup>, Mn<jats:sup>4+</jats:sup>) ions, which play a decisive role in determining the leakage current density. However, the Mn-doping at the Fe site in BFO reduces oxygen vacancies and Fe<jats:sup>2+</jats:sup> states, hence suppressing the leakage current density. The leakage current density is reduced by three orders of magnitude (10<jats:sup>−4</jats:sup> – 10<jats:sup>−7</jats:sup>) A/cm<jats:sup>2</jats:sup>, upon Mn-doping as clearly demonstrated by J-V characteristics. These results indicate that the primary contributors to the conduction in BFO based thin films are oxygen vacancies and the Fe<jats:sup>2+</jats:sup> states in these devices.</jats:p>

Topics

• Deposition
• density
• impedance spectroscopy
• phase
• scanning electron microscopy
• x-ray diffraction
• thin film
• x-ray photoelectron spectroscopy
• Oxygen
• glass
• glass
• crack
• current density
• tin
• Indium
• spin coating