| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kuzmin, Mikhail
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Bridging the gap between surface physics and photonicscitations
- 2022Production of Portland cement using fluorine gypsum – hydrofluoric acid wastecitations
- 2022Determination of the Thermodynamic Stability of Intermetallic Compounds in Technical Aluminumcitations
- 2020Effect of pressure on the elemental composition and magnetic properties of lithium-doped ZnO thin films
- 2020High-Temperature Ferromagnetism of Zn<sub>1-</sub><i><sub>x</sub></i>Mn<i><sub>x</sub></i>O<i><sub>y </sub></i>Thin Films Synthesized by Pulsed Laser Depositioncitations
- 2018Preparation of Aluminum–Carbon Nanotubes Composite Material by Hot Pressingcitations
- 2017Investigation of the structural anisotropy in a self-assembling glycinate layer on Cu(100) by scanning tunneling microscopy and density functional theory calculationscitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2011Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates:A catalyst for removal of amorphous surface oxidescitations
Places of action
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article
Effect of pressure on the elemental composition and magnetic properties of lithium-doped ZnO thin films
Abstract
<jats:title>Abstract</jats:title><jats:p>The paper presents the results of a study of the effect of pressure in a vacuum chamber on magnetic characteristics of Zn<jats:sub>1-x</jats:sub>Li<jats:sub>x</jats:sub>O<jats:sub>y</jats:sub> thin films obtained by pulsed laser deposition on sapphire substrates as well as the results of elemental analysis across thickness of the samples. Secondary ion mass spectrometry demonstrated that the method of pulsed laser deposition allows for the synthesis of zinc oxide based thin films characterized by a high uniformity of elemental composition across thickness. It was established that different pressure in the vacuum chamber affects the number of oxygen vacancies in thin films, but not the distribution of elements across thin film thickness. Weak room temperature ferromagnetism was observed in Zn<jats:sub>1-x</jats:sub>Li<jats:sub>x</jats:sub>O<jats:sub>y</jats:sub> thin films synthesized at a pressure of 3.15·10<jats:sup>−5</jats:sup> Torr; it increases upon the increase in lithium concentration. Interstitial lithium atoms are considered to play a important role in its occurrence. The results of the study allow for expansion of the body of knowledge about the nature of room temperature ferromagnetism in zinc oxide based thin film structures as well as for developing technologies for high-quality thin film materials for recording and storing information.</jats:p>