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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Torres, Jorge Andres Guerra
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Publications (5/5 displayed)
- 2023New optical dispersion models for the accurate description of the electrical permittivity in direct and indirect semiconductorscitations
- 2022Raman, TEM, EELS, and Magnetic Studies of a Magnetically Reduced Graphene Oxide Nanohybrid following Exposure to Daphnia magna Biomarkerscitations
- 2021Silicon interface passivation studied by modulated surface photovoltage spectroscopycitations
- 2021Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splittingcitations
- 2020Capacitance voltage curve simulations for different passivation parameters of dielectric layers on silicon
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article
Capacitance voltage curve simulations for different passivation parameters of dielectric layers on silicon
Abstract
<jats:title>Abstract</jats:title><jats:p>Surface passivation is a widely used technique to reduce the recombination losses at the semiconductor surface. The passivating layer performance can be mainly characterized by two parameters: The fixed charge density (<jats:italic>Q</jats:italic><jats:sub>ox</jats:sub>) and the interface trap density (<jats:italic>D</jats:italic><jats:sub>it</jats:sub>) which can be extracted from Capacitance-Voltage measurements (CV). In this paper, simulations of High-Frequency Capacitance-Voltage (HF-CV) curves were developed using simulated passivation parameters in order to examine the reliability of measured results. The <jats:italic>D</jats:italic><jats:sub>it</jats:sub> was modelled by two different sets of functions: First, the sum of Gaussian functions representing different dangling bond types and exponential tails for strained bonds. Second, a simpler U-shape model represented by the sum of exponential tails and a constant value function was employed. These simulations were validated using experimental measurements of a reference sample based on silicon dioxide on crystalline silicon (SiO<jats:sub>2</jats:sub>/c-Si). Additionally, a fitting process of HF-CV curves was proposed using the simple U-shape <jats:italic>D</jats:italic><jats:sub>it</jats:sub> model. A relative error of less than 0.4% was found comparing the average values between the approximated and the experimentally extracted <jats:italic>D</jats:italic><jats:sub>it</jats:sub>’s. The constant function of the approximated <jats:italic>D</jats:italic><jats:sub>it</jats:sub> represents an average of the experimentally extracted <jats:italic>D</jats:italic><jats:sub>it</jats:sub> for values around the midgap energy where the recombination efficiency is highest.</jats:p>