• Achinuq, Barat
• Sarcan, Fahrettin
• Kerrigan, Adam
• Lazarov, Vlado
• Aldawood, İbrahim
• Doğan, Ümit

Abstract

<jats:title>Abstract</jats:title><jats:p>In this study, the effect of Mg composition on structural and optical properties of MgxNi1-xO alloy thin film single crystal semiconductors as well as their implementation into Metal-Semiconductor-Metal (MSM) photodetector are studied. An 850 meV blue-shift of the bandgap is observed from 3.65 eV to 4.50 eV with increasing Mg composition from 0% to 67%. The deep ultraviolet/visible rejection ratio, which is the ratio of photosensitivity at a peak wavelength of 360 nm to that at 450 nm is found to be ~58 for Mg composition of 67%. Mg rich (%67 Mg) alloy-based photodetector is found to have two orders smaller dark current and have higher spectral response compared to NiO-based one. Spectral responsivities for MgxNi1-xO photodetectors are determined as 415 mA/W, 80 mA/W, and 5.6 mA/W for Mg compositions of 67%, 21%, and 0% (reference-NiO), respectively. Furthermore, the detectivity of the photodetectors enhances as Mg composition increases and the highest detectivity of a magnitude of 1011 Jones is found for the photodetector with Mg composition of 67%.</jats:p>

Topics

• impedance spectroscopy
• single crystal
• thin film
• semiconductor