Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (3/3 displayed)

  • 2023CaPdBi: A Nontrivial Topological Candidatecitations
  • 2022Transport characteristics and lattice dynamics with phonon topology accentuation in layered CuTlX (X: S, Se)2citations
  • 2022High-pressure study of the aurophilic topological Dirac material AuI16citations

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Kanchana, V.
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Co-Authors (by relevance)

  • Kanchana, V.
  • Behatha, Anuroopa
  • Desai, Vishal V.
  • Singh, Jaspreet
  • Venkatakrishnan, Kanchana
  • Errandonea Ponce, Daniel
  • Vaitheeswaran, Ganapathy
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article

Transport characteristics and lattice dynamics with phonon topology accentuation in layered CuTlX (X: S, Se)

  • Sahoo, Sushree Sarita
  • Kanchana, V.
Abstract

<jats:title>Abstract</jats:title><jats:p>In recent years, numerous Cu-based compounds have attracted a great deal of interest for enhanced thermoelectric energy conversion. Here, we demonstrate that CuTlX (X: S, Se), a layered semiconductor, exhibits low lattice thermal conductivity (<jats:italic>κ</jats:italic><jats:sub><jats:italic>l</jats:italic></jats:sub>) and a high thermoelectric figure of merit (<jats:italic>ZT</jats:italic>), using density functional theory calculations and Boltzmann transport theory beyond relaxation time approximation. To evaluate the absolute values of thermoelectric coefficients, different scattering mechanisms such as acoustic deformation potential scattering, impurity phonon scattering, and polar optical phonon scattering are analysed. This low lattice thermal conductivity, which is complemented by a low group velocity and a low phonon lifetime, accounts for the remarkable thermoelectric efficiency in these compounds. In CuTlS, the contribution of the in-plane optical phonon mode to <jats:italic>κ</jats:italic><jats:sub><jats:italic>l</jats:italic></jats:sub> results in a decrease in its value, which might be attributed to the occurrence of Dirac-like crossings with non-trivial topological characteristics, as corroborated by the non-zero Berry curvature value. Overall, the thermoelectric behavior of both compounds is favorable at ambient temperature. Specifically, the out-of-plane direction in CuTlSe presents elevated thermoelectric performance with a high value for the thermoelectric figure of merit, with 1.08 and 1.16 for holes and electrons, respectively, at 300 K at the optimal carrier density of 10<jats:sup>19</jats:sup> cm<jats:sup>−3</jats:sup> , which well aids in both the electron and phonon transport. We also undertook monolayer examinations of these compounds due to the existence of van der Waals interactions, which predicted strong thermoelectric performance for both carrier concentrations at 300 K. As a result, our study presents a theoretical prediction on transport phenomena that requires experimental verification and should motivate additional research into prospective thermoelectric materials in the same crystal family for device applications.</jats:p>

Topics
  • density
  • impedance spectroscopy
  • compound
  • theory
  • semiconductor
  • layered
  • density functional theory
  • thermal conductivity