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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Tozer, Stanley W.
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article
Pressure-induced shift of effective Ce valence, Fermi energy and phase boundaries in CeOs4Sb12
Abstract
CeOs<sub>4</sub>Sb<sub>12</sub>, a member of the skutterudite family, has an unusual semimetallic low-temperature L-phase that inhabits a wedge-like area of the field H—temperature T phase diagram. We have conducted measurements of electrical transport and megahertz conductivity on CeOs<sub>4</sub>Sb<sub>12</sub> single crystals under pressures of up to 3 GPa and in high magnetic fields of up to 41 T to investigate the influence of pressure on the different H–T phase boundaries. While the high-temperature valence transition between the metallic H-phase and the L-phase is shifted to higher T by pressures of the order of 1 GPa, we observed only a marginal suppression of the S-phase that is found below 1 K for pressures of up to 1.91 GPa. High-field quantum oscillations have been observed for pressures up to 3.0 GPa and the Fermi surface of the high-field side of the H-phase is found to show a surprising decrease in size with increasing pressure, implying a change in electronic structure rather than a mere contraction of lattice parameters. We evaluate the field-dependence of the effective masses for different pressures and also reflect on the sample dependence of some of the properties of CeOs<sub>4</sub>Sb<sub>12</sub> which appears to be limited to the low-field region.