| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Berbezier, Isabelle
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2021Implementation of Nanoscale Secondary‐Ion Mass Spectrometry Analyses: Application to Ni‐Based Superalloyscitations
- 2019Deterministic 3D self-assembly of Si through a rim-less and topology-preserving dewetting regime
- 2019Deterministic three-dimensional self-assembly of Si through a rimless and topology-preserving dewetting regimecitations
- 2019High graphene permeability for room temperature silicon deposition: The role of defectscitations
- 2017Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensationcitations
- 2017Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitecturescitations
- 2017Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopycitations
- 2017Contacting of Si/SiO2 core/shell nanowires using laser photolithography
- 2016Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometrycitations
- 2016van der Waals Heteroepitaxy of Germanene Islands on Graphitecitations
- 2016van der Waals Heteroepitaxy of Germanene Islands on Graphitecitations
- 2016Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewettingcitations
- 2015Kinetics and Energetics of Ge Condensation in SiGe Oxidationcitations
- 2014Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxycitations
- 2013Ultimate nanopatterning of Si substrate using filtered liquid metal alloy ion source-focused ion beamcitations
- 2013Ordered arrays of Si and Ge nanocrystals via dewetting of pre-patterned thin filmscitations
- 2012Design of free patterns of nanocrystals with ad hoc features via templated dewettingcitations
- 2012The kinetics of dewetting ultra-thin Si layers from silicon dioxidecitations
- 2011In-Plane Epitaxial Growth of Self-Assembled Ge Nanowires on Si Substrates Patterned by a Focused Ion Beamcitations
- 2011Vapor–solid–solid growth of Ge nanowires from GeMn solid cluster seedscitations
- 2011Mn5Ge3 films grown on Ge(1 1 1)-c(2 × 8)citations
- 2010Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structurescitations
- 2007Structural and magnetic properties of Mn5Ge3 nanoclusters dispersed in MnxGe1−x/Ge(0 0 1)2 × 1 diluted magnetic semiconductorscitations
- 2006Structural and magnetic properties of GeMn diluted magnetic semiconductorcitations
- 2006Structural and magnetic properties of GeMn diluted magnetic semiconductorcitations
- 2002Sb-surfactant mediated growth of Ge nanostructures
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article
The kinetics of dewetting ultra-thin Si layers from silicon dioxide
Abstract
International audience ; In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy EH ∼ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ∼ t0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ∼ h−1 as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving force, which is based on the ...