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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bonura, Marco
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Publications (5/5 displayed)
- 2024Thickness effect on superconducting properties of niobium films for radio-frequency cavity applicationscitations
- 2023Impact of deoxygenation/reoxygenation processes on the superconducting properties of commercial coated conductorscitations
- 2023Effects of the oxygen source configuration on the superconducting properties of internally-oxidized internal-Sn Nb<sub>3</sub>Sn wirescitations
- 2022Reverse coating technique for the production of Nb thin films on copper for superconducting radio-frequency applicationscitations
- 2010Dielectric properties of myoglobin at 10 GHz by microwave cavity perturbation measurements
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article
Effects of the oxygen source configuration on the superconducting properties of internally-oxidized internal-Sn Nb<sub>3</sub>Sn wires
Abstract
<jats:title>Abstract</jats:title><jats:p>We successfully manufactured 12-filament rod-in-tube Nb<jats:sub>3</jats:sub>Sn wires with oxide nanoparticles formed by the internal oxidation method. We employed Nb-7.5 wt%Ta-1 wt%Zr and Nb-7.5 wt%Ta-2 wt% Hf alloys along with oxygen sources (OSs) in two different configurations—in the core of Nb filaments (coreOS) and at the boundary between the filaments and the Cu tube (annularOS)—to assess the influence of the OS layout on the superconducting properties and grain size. The simultaneous presence of the OS and of Hf or Zr reduced the average Nb<jats:sub>3</jats:sub>Sn grain size to around 50 nm, leading to an enhancement of the layer critical current density (<jats:italic>J<jats:sub>c</jats:sub></jats:italic>) up to 3000 A mm<jats:sup>−2</jats:sup> at 4.2 K and 16 T for the Hf-annularOS wire. Samples manufactured with an OS show a shift toward higher reduced magnetic fields of the position of the maximum in pinning-force density, this shift being more pronounced when SnO<jats:sub>2</jats:sub> is added in the annularOS configuration, and for the Hf-containing samples. This enhanced pinning at higher magnetic field is beneficial for high-field magnet applications. Moreover, we measured a very high upper critical field, reaching 29.3 T at 4.2 K in the Hf-annularOS samples.</jats:p>