• Banerjee, Archan
• Baker, Luke J.
• Doye, Alastair
• Maclaren, Ian
• Erotokritou, Kleanthis
• Barber, Zoe H.
• Hadfield, Robert H.
• Bosworth, David
• Heath, Robert Martyn
• Nord, Magnus

Abstract

We report on the optimisation of amorphous molybdenum silicide thin film growth for superconducting nanowire single-photon detector (SNSPD) applications. Molybdenum silicide was deposited via co-sputtering from Mo and Si targets in an Ar atmosphere. The superconducting transition temperature (T c) and sheet resistance (R s) were measured as a function of thickness and compared to several theoretical models for disordered superconducting films. Superconducting and optical properties of amorphous materials are very sensitive to short- (up to 1 nm) and medium-range order (~1–3 nm) in the atomic structure. Fluctuation electron microscopy studies showed that the films assumed an A15-like medium-range order. Electron energy loss spectroscopy indicates that the film stoichiometry was close to Mo83Si17, which is consistent with reports that many other A15 structures with the nominal formula A 3 B show a significant non-stoichiometry with A:B > 3:1. Optical properties from ultraviolet (270 nm) to infrared (2200 nm) wavelengths were measured via spectroscopic ellipsometry for 5 nm thick MoSi films indicating high long wavelength absorption. We also measured the current density as a function of temperature for nanowires patterned from a 10 nm thick MoSi film. The current density at 3.6 K is 3.6 × 105 A cm−2 for the widest wire studied (2003 nm), falling to 2 × 105 A cm−2 for the narrowest (173 nm). This investigation confirms the excellent suitability of MoSi for SNSPD applications and gives fresh insight into the properties of the underlying materials.

Topics

• density
• impedance spectroscopy
• molybdenum
• amorphous
• thin film
• ellipsometry
• electron microscopy
• current density
• wire
• electron energy loss spectroscopy
• silicide