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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sonneville, Camille
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substratescitations
- 2023Vertical pin diodes on large freestanding (100) diamond film
- 2019Structure—longitudinal sound velocity relationships in glassy anorthite (CaAl2Si2O8) up to 20 GPa: An in situ Raman and Brillouin spectroscopy studycitations
- 2016The structure of haplobasaltic glasses investigated using X-ray absorption near edge structure (XANES) spectroscopy at the Si, Al, Mg, and O K-edges and Ca, Si, and Al L-2,L-3-edgescitations
- 2016In situ structural changes of amorphous diopside (CaMgSi2O6) up to 20 GPa: A Raman and O K-edge X-ray Raman spectroscopic studycitations
- 2013Polyamorphic transitions in silica glasscitations
- 2011Femtosecond laser induced density changes in GeO2 and SiO2 glasses: fictive temperature effect [Invited]
- 2011Laser-induced structural changes in pure GeO2 glassescitations
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article
Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates
Abstract
The forward and reverse current transport mechanisms, temperature dependence of Schottky barrier height (SBH) and ideality factor, barrier inhomogeneity analysis, and trap parameters for Schottky barrier diodes (SBDs) fabricated on 4H-SiC, GaN-on-GaN and AlGaN/GaN epitaxial substrates are reported. High SBH is identified for Ni/4H-SiC (1.31 eV) and Ti/4H-SiC (1.18 eV) SBDs with a low leakage current density of < 10$^{-8}$ A/cm$^2$ at -200 V. Thermally stimulated capacitance (TSCAP) detects the well-known Z$_{1/2}$ electron trap at EC – 0.65 eV in both 4H-SiC SBDs, while an additional deep-level trap at EC – 1.13 eV is found only in Ni/4H-SiC SBDs. The vertical Ni/GaN SBD exhibits a promising SBH of 0.83 eV, and two electron traps at EC – 0.18 eV and EC – 0.56 eV are identified from deep-level transient Fourier spectroscopy (DLTFS). A peculiar two-diode model behaviour is detected at Metal/GaN/AlGaN/GaN interface of high-electron mobility transistor (HEMT); the first diode (SBH-1 of 1.15 eV) exists at the standard Metal/GaN Schottky junction, whereas the second diode (SBH-2 of 0.72 eV) forms due to the energy difference between the AlGaN conduction band and the heterojunction Fermi level. The compensational Fe-doping-related buffer traps at EC – 0.5 eV and EC – 0.6 eV are determined in the AlGaN/GaN HEMT, through the drain current transient spectroscopy (DCTS) experiments.