| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pastor Pastor, David
Universidad Complutense de Madrid
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser meltingcitations
- 2023Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements
- 2023Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements
- 2022Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser meltingcitations
- 2022On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodescitations
- 2015Meyer Neldel rule application to silicon supersaturated with transition metalscitations
- 2014Room-temperature operation of a titanium supersaturated silicon-based infrared photodetectorcitations
- 2013Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
- 2013Electrical decoupling effect on intermediate band Ti-implanted silicon layerscitations
- 2013Study of the electrical behavior in Intermediate Band-Si junctions
- 2012Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantationcitations
- 2012Interstitial Ti for intermediate band formation in Ti-supersaturated siliconcitations
- 2002Effect of long chain branching on linear-viscoelastic melt properties of polyolefinscitations
Places of action
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article
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements
Abstract
<jats:title>Abstract</jats:title><jats:p>Hyperdoped or supersaturated semiconductors are gathering the attention of industry and research institutions due to their sub-bandgap photon absorption properties. In this study, two fast and non-invasive techniques, time-resolved reflectometry (TRR) and Haze Measurements, are applied to infer the melt and solidification regimes of Ti supersaturated 300 mm silicon wafers, aiming to ease the characterization process towards high volume manufacturing of supersaturated materials. Ti supersaturation is attained by using an ion implantation process with a dose 3 × 10<jats:sup>15</jats:sup> cm<jats:sup>−2</jats:sup>, which amorphizes the surface. Crystalline quality is then recovered by means of a XeCl UV nanosecond laser annealing process. TRR technique is used to determine two different melting and solidification processes of the laser annealed implanted surface. A first brief, low temperature peak (<jats:italic>α</jats:italic> peak) is associated with the melting process of the amorphized surface, followed by a longer peak/plateau (<jats:italic>β</jats:italic><jats:sub>1</jats:sub> peak/plateau), linked to the melting process of the crystalline phase below the amorphized layer, at sufficiently high laser fluences. Haze technique is used to indirectly measure the crystalline quality after the solidification process of the laser-annealed surface. Atomic force microscopy measurements are used to obtain the surface roughness value and cross-section high resolution transmission electron microscopy micrographs to check crystalline quality.</jats:p>