| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Li, Xiao
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023Determining role of W+ ions in the densification of TiAlWN thin films grown by hybrid HiPIMS/DCMS technique with no external heatingcitations
- 2023Discovery of Guinier-Preston zone hardening in refractory nitride ceramicscitations
- 2022Manufacture aluminum alloy tube from powder with a single-step extrusion via ShAPEcitations
- 2022Dense, single-phase, hard, and stress-free Ti0.32Al0.63W0.05N films grown by magnetron sputtering with dramatically reduced energy consumptioncitations
- 2022Porosity evolution during heating of copper made from powder by friction extrusioncitations
- 2021Toward energy-efficient physical vapor deposition : Routes for replacing substrate heating during magnetron sputter deposition by employing metal ion irradiationcitations
- 2021Microstructural evolution in Cu–Nb processed via friction consolidationcitations
- 2021Si tunnel junctions obtained by proximity rapid thermal diffusion for tandem photovoltaic cells
- 2021Si tunnel junctions obtained by proximity rapid thermal diffusion for tandem photovoltaic cells
- 2021Towards energy-efficient physical vapor deposition : Mapping out the effects of W+ energy and concentration on the densification of TiAlWN thin films grown with no external heatingcitations
- 2021Copper carbon composite wire with a uniform carbon dispersion made by friction extrusioncitations
- 2013Processing and Performance of Polymeric Transparent Conductive Compositescitations
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article
Si tunnel junctions obtained by proximity rapid thermal diffusion for tandem photovoltaic cells
Abstract
Low-resistance c-Si Esaki tunnel junctions (TJ) can be applied in two-terminal Si-based tandem solar cells to electrically connect two sub-cells. Proximity rapid thermal diffusion (PRTD) is an economical and facile method to fabricate the Si tunnel junctions with a damage-free surface. The p(++)/n(++) Si TJ on (111)-oriented c-Si wafer produced by combining PRTD and photovoltaic industrial techniques is reported in this work. The adjustment of the n(++) emitter by a two-step rapid thermal annealing effectively facilitates the realization of the p(++)/n(++) TJ. The peak current density of a tunnel diode based on this TJ is within the range 140-192 A cm(-2) with a peak to valley current ratio of 1.9-3.2. Such a p(++)/n(++) TJ is implemented in III-V nanowires (NWs) on Si tandem solar cells. Despite the defectuosity of the NWs array, we demonstrate that an increase of the open-circuit voltage is observed compared with the sole single-junction Si solar cell. This kind of TJ can also be integrated with other top cell materials such as perovskites and copper indium gallium selenide. Low-cost and high-efficiency c-Si based tandem solar cells might be produced with the application of Si TJs obtained by PRTD.