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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Li, Lei
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Topics
Publications (9/9 displayed)
- 2023Extraordinary Permittivity Characterization Using 4H-SiC Substrate-Integrated-Waveguide Resonatorscitations
- 20233D Printed Polyimide Nanocomposite Aerogels for Electromagnetic Interference Shielding and Thermal Managementcitations
- 20233D printed polyimide nanocomposite aerogels for electromagnetic interference shielding and thermal managementcitations
- 2023An efficient algorithm to measure arrival times of weak seismic phasescitations
- 2021Mechanical and microstructural characterization of AZ31 magnesium‑carbon fiber reinforced polymer joint obtained by friction stir interlocking techniquecitations
- 2021Next generation electronics on the ultrawide-bandgap aluminum nitride platformcitations
- 2021Vibrational Perturbation of the [FeFe] Hydrogenase H-Cluster Revealed by 13C2H-ADT Labeling.citations
- 2021Vibrational Pertubation of the FeFe Hydrogenase H-Cluster Revealed by a C2H ADTcitations
- 2013Manufacturing of a precision 3D microlens array on a steep curved substrate by injection molding processcitations
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article
Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Abstract
<jats:title>Abstract</jats:title><jats:p>Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, we propose the shift to the aluminum nitride (AlN) platform. AlN allows for smarter, highly-scaled heterostructure design that will improve the output power and thermal management of III-nitride amplifiers. Beyond improvements over the incumbent amplifier technology, AlN will allow for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with AlN. It is on this new AlN platform that nitride electronics may maximize their full high-power, high-speed potential for mm-wave communication and high-power logic applications.</jats:p>