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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tseng, Tseung-Yuen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022Flower-like nanosheets FeCo2O4 for application in supercapacitor and dye-sensitized solar cellcitations
- 2021Synaptic behaviour of TiO x/HfO2RRAM enhanced by inserting ultrathin Al2O3layer for neuromorphic computingcitations
- 2021Transformation of digital to analog switching in TaO x -based memristor device for neuromorphic applicationscitations
- 2021Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applicationscitations
- 2020Facile and One-Step in Situ Synthesis of Pure Phase Mesoporous Li2MnSiO4/CNTs Nanocomposite for Hybrid Supercapacitorscitations
- 2020The synergistic effect of iron cobaltite compare to its single oxides as cathode in supercapacitorcitations
- 2020Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memorycitations
- 2019Synthesis of Free-Standing Flexible rGO/MWCNT Films for Symmetric Supercapacitor Applicationcitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devicescitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicescitations
- 2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layercitations
- 2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellcitations
- 2017Ternary Au/ZnO/rGO nanocomposites electrodes for high performance electrochemical storage devicescitations
- 2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmscitations
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article
Synaptic behaviour of TiO x/HfO2RRAM enhanced by inserting ultrathin Al2O3layer for neuromorphic computing
Abstract
<p>The synaptic linearity of resistive random-access memory (RRAM) based on TiO x /HfO2 improved by inserting an ultrathin Al2O3 layer is investigated. A gradual bipolar switching with a positive set and a negative reset is observed for devices with an Al2O3 layer after an electroforming process. The devices with a 1 nm Al2O3 layer exhibit acceptable reliability with >400 cycles DC endurance with no decrement of the on/off ratio after 104 sec. A remarkable enhancement in the synaptic linearity of potentiation 2.15 and depression 1.52 is achieved in this device. The conduction mechanisms at different current regions of the optimized device are studied. The presence of the Al2O3 layer is confirmed by x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy analyses. About 42% of the oxygen vacancy concentration calculated from the XPS spectra is responsible for the synaptic properties. This synaptic RRAM structure is suitable for upcoming neuromorphic computing devices. </p>