| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Cordier, Yvon
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substratescitations
- 2023Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomographycitations
- 2023High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multiplierscitations
- 2023Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substratecitations
- 2022CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growthcitations
- 2021Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor depositioncitations
- 2021AlGaN channel high electron mobility transistors with regrown ohmic contactscitations
- 2021New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistorcitations
- 2021New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistorcitations
- 2020Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF lossescitations
- 2020Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistorscitations
- 2019MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses
- 2012"Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process"
- 2012Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substratescitations
Places of action
| Organizations | Location | People |
|---|
article
New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor
Abstract
<jats:title>Abstract</jats:title><jats:p>This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al<jats:sub>0.2</jats:sub>Ga<jats:sub>0.8</jats:sub>N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good performances by using digital etching (DE) process for the gate recess. The gate insulator is deposited using two technics: plasma enhance chemical vapour deposition (sample A) and atomic layer deposition (sample B). Indeed, the two devices present a threshold voltage (<jats:italic>V</jats:italic><jats:sub>th</jats:sub>) of +0.4 V and +0.9 V respectively with Δ<jats:italic>V</jats:italic><jats:sub>th</jats:sub> about 0.1 V and 0.05 V extracted from the hysteresis gate capacitance measurement, a gate leakage current below 2 × 10<jats:sup>−10</jats:sup> A mm<jats:sup>−1</jats:sup>, an <jats:italic>I</jats:italic><jats:sub>ON</jats:sub>/<jats:italic>I</jats:italic><jats:sub>OFF</jats:sub> about 10<jats:sup>8</jats:sup> and a breakdown voltage of <jats:italic>V</jats:italic><jats:sub>BR</jats:sub> = 150 V and 200 V respectively with 1.5 <jats:italic>µ</jats:italic>m thick buffer layer. All these results are indicating a good barrier surface quality after the gate recess. The DE mechanism is based on chemical dissolution of oxides formed during the first step of DE. Consequently, the process is relatively soft with very low induced physical damages at the barrier layer surface.</jats:p>