| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bai, J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Mechanical and physical properties of flexible polyurethane foam filled with waste tire material recycles
- 2024Mechanical and physical properties of flexible polyurethane foam filled with waste tire material recycles
- 2023Solvent polarity impacts the sorption kinetics and tensile properties of carbon black filled elastomerscitations
- 2023Laser processing of carbon black reinforced ethylene-butylacrylate copolymer
- 2022Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
- 2022Assessing the effect of compaction pressure on the mechanical properties of polytetrafluoroethylene elaborated by field assisted sintering techniquecitations
- 2022Assessing the effect of compaction pressure on the mechanical properties of polytetrafluoroethylene elaborated by field assisted sintering technique
- 2021Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
- 2020Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates
- 2018Stress corrosion cracking initiation and short crack growth behaviour in Alloy 182 weld metal under simulated boiling water reactor hydrogen water chemistry conditionscitations
- 2018Electrochemical and spectroscopic characterization of oxide films formed on Alloy 182 in simulated boiling water reactor environment: Effect of dissolved hydrogencitations
- 2017Using tapered specimens to study the effect of hydrogen and surface finish on SCC initiation in Alloy 182 under boiling water reactor conditionscitations
- 2016Using tapered specimens to study the effect of hydrogen on SCC initiation in Alloy 182 under BWR conditions
- 2016Dielectric barrier discharge assisted continuous plasma polypyrrole deposition for the surface modification of carbon nanotube-grafted carbon fiberscitations
- 2016Experimental and numerical investigation of the behaviour of CFRP strengthened CHS beams subjected to bendingcitations
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article
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
Abstract
The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires. © 2020 The Author(s). Published by IOP Publishing Ltd. ; Leibniz_Fonds ; publishedVersion