| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Edwards, Paul
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2021Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectorscitations
- 2021(Hydroxy)apatite on cementcitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2019Room temperature cathodoluminescence quenching of Er3+ in AlNOErcitations
- 2017Charge carrier localised in zero-dimensional (CH 3 NH 3 ) 3 Bi 2 1 9 clusterscitations
- 2017Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56citations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusterscitations
- 2017Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopycitations
- 2016Reprint of
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2016Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDscitations
- 2015Digital direct electron imaging of energy-filtered electron backscatter diffraction patternscitations
- 2013Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopecitations
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2009Star-shaped oligofluorene nanostructured blend materialscitations
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2002GaN microcavities formed by laser lift-off and plasma etchingcitations
- 2001InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching
Places of action
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article
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
Abstract
The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires. © 2020 The Author(s). Published by IOP Publishing Ltd. ; Leibniz_Fonds ; publishedVersion