| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Roberts, Joseph
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020(Invited) Band Line-up of High-k Oxides on GaN
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Effect of HCl cleaning on InSb–Al<sub>2</sub>O<sub>3</sub> MOS capacitorscitations
- 2018Band alignments at Ga2O3 heterojunction interfaces with Si and Gecitations
- 2018Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTscitations
- 2016Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by <i>in-situ</i> fluorine doping of atomic layer deposition Al2O3 gate dielectricscitations
- 2016Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)<i>x</i>(Al2O3)1−<i>x</i> as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistorscitations
- 2016Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectricscitations
Places of action
| Organizations | Location | People |
|---|
article
Effect of HCl cleaning on InSb–Al<sub>2</sub>O<sub>3</sub> MOS capacitors
Abstract
<jats:title>Abstract</jats:title><jats:p>In this work, the role of HCl treatments on InSb surfaces and InSb–Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl<jats:sub>3</jats:sub> which is not present for similar HCl-water processes. Furthermore, this InCl<jats:sub>3</jats:sub> layer desorbs from the surface between 200 °C and 250 °C. Metal–oxide–semiconductor capacitors were fabricated using atomic layer deposition of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> at 200 °C and 250 °C and the presence of InCl<jats:sub>3</jats:sub> was associated with a +0.79 V flatband voltage shift. The desorption of the InCl<jats:sub>3</jats:sub> layer at 250 °C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (<jats:italic>D</jats:italic><jats:sub>it</jats:sub>) and hysteresis voltage (<jats:italic>V</jats:italic><jats:italic><jats:sub>H</jats:sub></jats:italic>). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.</jats:p>