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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Branquinho, Rita
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2020Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistorcitations
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 2020Solution combustion synthesis of transparent conducting thin films for sustainable photovoltaic applicationscitations
- 2020Solution combustion synthesis of transparent conducting thin films for sustainable photovoltaic applicationscitations
- 2020Piezoelectricity Enhancement of Nanogenerators Based on PDMS and ZnSnO3 Nanowires through Microstructurationcitations
- 2019Tailoring IGZO composition for enhanced fully solution-based thin film transistorscitations
- 2018Boosting highly transparent and conducting indium zinc oxide thin films through solution combustion synthesis: Influence of rapid thermal annealingcitations
- 2016UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistorscitations
- 2016FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs
- 2015Gravure printed sol-gel derived AlOOH hybrid nanocomposite thin films for printed electronicscitations
- 2015Gravure printed sol-gel derived AlOOH hybrid nanocomposite thin films for printed electronicscitations
- 2015Morphological and optical characterization of transparent thin films obtained at low temperature using ZnO nanoparticles
- 2015A combination of solution synthesis solution combustion synthesis for highly conducting and transparent Aluminum Zinc Oxide thin filmscitations
- 2014Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-based TFTscitations
- 2013Preparation and characterization of cellulose nanocomposite hydrogels as functional electrolytescitations
- 2008Adsorption and catalytic properties of SiO2/Bi2S3 nanocomposites on the methylene blue photodecolorization processcitations
Places of action
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article
Boosting highly transparent and conducting indium zinc oxide thin films through solution combustion synthesis: Influence of rapid thermal annealing
Abstract
<p>IZO thin films with In:Zn ratio of 7:3 and 3:7 were prepared by solution combustion synthesis of metal oxide nitrates and influence of post-deposition rapid thermal annealing (RTA) was studied. Individual 0.5 M indium and zinc oxide precursor solutions were mixed in 7:3 and 3:7 compositions. XRD analysis showed IZO 7:3 composition has only cubic bixbyite In<sub>2</sub>O<sub>3</sub> structure while IZO 3:7 composition showed both hexagonal wurtzite ZnO and cubic bixbyite In<sub>2</sub>O<sub>3</sub> phases. SEM and AFM analysis showed low roughness for IZO 7:3, rms < 2 nm whereas for IZO 3:7 composition surface roughness was >22 nm due to phase segregation. UV/ViS/NIR analysis showed transparency range desirable of transparent conductors for both compositions. Post-deposition RTA treatment resulted in high conductivity single phase IZO 7:3 films. Segregation of phases enhanced carrier scattering resulting in decreased mobility for IZO 3:7 films. Best performing IZO films demonstrated low resistivity 7.66 ×10<sup>-3</sup> Ohm cm and high carrier concentration 5.09 ×10<sup>19</sup>/cm<sup>3</sup> after 10 min RTA at 600 °C. These results demonstrate combustion synthesis and RTA are successful for development of films with enhanced conductivity and transparency through low cost vacuum-free synthesis reducing indium content for applications in photovoltaic devices, flat panel displays and transparent electronics.</p>