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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Santa, Ana
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Publications (4/4 displayed)
- 2023Parylene-Sealed Perovskite Nanocrystals Down-Shifting Layer for Luminescent Spectral Matching in Thin Film Photovoltaicscitations
- 2023Parylene-Sealed Perovskite Nanocrystals Down-Shifting Layer for Luminescent Spectral Matching in Thin Film Photovoltaicscitations
- 2020Rail-to-Rail Timing Signals Generation Using InGaZnO TFTs for Flexible X-Ray Detectorcitations
- 2018Boosting highly transparent and conducting indium zinc oxide thin films through solution combustion synthesis: Influence of rapid thermal annealingcitations
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article
Boosting highly transparent and conducting indium zinc oxide thin films through solution combustion synthesis: Influence of rapid thermal annealing
Abstract
<p>IZO thin films with In:Zn ratio of 7:3 and 3:7 were prepared by solution combustion synthesis of metal oxide nitrates and influence of post-deposition rapid thermal annealing (RTA) was studied. Individual 0.5 M indium and zinc oxide precursor solutions were mixed in 7:3 and 3:7 compositions. XRD analysis showed IZO 7:3 composition has only cubic bixbyite In<sub>2</sub>O<sub>3</sub> structure while IZO 3:7 composition showed both hexagonal wurtzite ZnO and cubic bixbyite In<sub>2</sub>O<sub>3</sub> phases. SEM and AFM analysis showed low roughness for IZO 7:3, rms < 2 nm whereas for IZO 3:7 composition surface roughness was >22 nm due to phase segregation. UV/ViS/NIR analysis showed transparency range desirable of transparent conductors for both compositions. Post-deposition RTA treatment resulted in high conductivity single phase IZO 7:3 films. Segregation of phases enhanced carrier scattering resulting in decreased mobility for IZO 3:7 films. Best performing IZO films demonstrated low resistivity 7.66 ×10<sup>-3</sup> Ohm cm and high carrier concentration 5.09 ×10<sup>19</sup>/cm<sup>3</sup> after 10 min RTA at 600 °C. These results demonstrate combustion synthesis and RTA are successful for development of films with enhanced conductivity and transparency through low cost vacuum-free synthesis reducing indium content for applications in photovoltaic devices, flat panel displays and transparent electronics.</p>