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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dushaq, Ghada
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Publications (7/7 displayed)
- 2022Exceptionally high work density of a ferroelectric dynamic organic crystal around room temperaturecitations
- 2020Strong enhancement of direct transition photoluminescence at room temperature for highly tensile-strained Ge decorated using 5 nm gold nanoparticlescitations
- 2020Tuning the photoluminescence of few-layer MoS2nanosheets by mechanical nanostamping for broadband optoelectronic applicationscitations
- 2019Hexagonal germanium formation at room temperature using controlled penetration depth nano-indentationcitations
- 2019Integration of metal- GaAs -Metal photodetectors on si using thin ge buffer layers for applications in visible photonics
- 2018Passivation of Ge/high-κ interface using RF Plasma nitridationcitations
- 2017Germanium MOS capacitors grown on Silicon using low temperature RF-PECVDcitations
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article
Passivation of Ge/high-κ interface using RF Plasma nitridation
Abstract
<p>In this paper, plasma nitridation of a germanium surface using NH<sub>3</sub> and N<sub>2</sub> gases is performed with a standard RF-PECVD method at a substrate temperature of 250 °C. The structural and optical properties of the Ge surface have been investigated using Atomic Force Microscopy (AFM), Fourier Transform Infrared Spectroscopy (FT-IR), and Variable Angle Spectroscopic Ellipsometery (VASE). Study of the Ge (100) surface revealed that it is nitrated after plasma treatment while the GeO<sub>2</sub> regrowth on the surface has been suppressed. Also, stability of the treated surface under air exposure is observed, where all the measurements were performed at room ambient. The electrical characteristics of fabricated Al/Ti/HfO<sub>2</sub>/GeON/p-Ge capacitors using the proposed surface treatment technique have been investigated. The C-V curves indicated a negligible hysteresis compared to ∼500 mV observed in untreated samples. Additionally, the C-V characteristic is used to extract the high-κ/Ge interface trap density using the most commonly used methods in determining the interface traps. The discussion includes the Dit calculation from the high-low frequency (Castagné-Vapaille) method and Terman (high-frequency) method. The high-low frequency method indicated a low interface trap density of ∼2.5 ×10<sup>11</sup> eV<sup>-1</sup>.cm<sup>-2</sup> compared to the Terman method. The J-V measurements revealed more than two orders of magnitude reduction of the gate leakage. This improved Ge interface quality is a promising low-temperature technique for fabricating high-performance Ge MOSFETs.</p>