Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
693.932 People People

693.932 People

Show results for 693.932 people that are selected by your search filters.

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PeopleLocationsStatistics
Naji, M.
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Liu, Xiaolong

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Aalto University

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (13/13 displayed)

  • 2024Wetting Properties of Black Silicon Layers Fabricated by Different Techniques3citations
  • 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processingcitations
  • 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interface2citations
  • 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interface2citations
  • 2024Impact of post-ion implantation annealing on Se-hyperdoped Ge1citations
  • 2024Impact of post-ion implantation annealing on Se-hyperdoped Ge1citations
  • 2024Bridging the gap between surface physics and photonics2citations
  • 2024Contactless analysis of surface passivation and charge transfer at the TiO2-Si interface2citations
  • 2023(oral talk) Effective carrier lifetime in ultrashort pulse laser hyperdoped silicon: dopant concentration dependence and practical upper limitscitations
  • 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiode4citations
  • 2023Properties of Black Silicon Layers Fabricated by Different Techniques for Solar Cell Applications8citations
  • 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etching32citations
  • 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Silicon11citations

Places of action

Chart of shared publication
Ayvazyan, Gagik
2 / 3 shared
Savin, Hele
12 / 75 shared
Vardanyan, Arman
1 / 1 shared
Hakhoyan, Levon
2 / 2 shared
Seibt, Michael
1 / 14 shared
Radfar, Behrad
8 / 9 shared
Paulus, Simon
2 / 3 shared
Niemeyer, Tobias
1 / 1 shared
Schäfer, Sören
4 / 6 shared
Koskinen, Vesa
1 / 1 shared
Vähänissi, Ville
11 / 43 shared
Kontermann, Stefan
4 / 8 shared
Kearney, Patrick Mc
3 / 3 shared
Mutschall, Doris
1 / 2 shared
Serue, Michael
2 / 2 shared
Pasanen, Hannu P.
3 / 6 shared
Ali-Löytty, Harri
3 / 44 shared
Khan, Ramsha
3 / 13 shared
Tkachenko, Nikolai V.
3 / 19 shared
Berencen, Yonder
2 / 4 shared
Kentsch, Ulrich
2 / 7 shared
Zhou, Shengqiang
2 / 15 shared
Mc Kearney, Patrick
1 / 2 shared
Punkkinen, Marko
1 / 6 shared
Kuzmin, Mikhail
1 / 10 shared
Kokko, Kalevi
1 / 10 shared
Hakkarainen, Teemu
1 / 5 shared
Viheriälä, Jukka
1 / 2 shared
Guina, Mircea
1 / 36 shared
Tukiainen, Antti
1 / 23 shared
Laukkanen, Pekka
1 / 11 shared
Setälä, Olli E.
2 / 4 shared
Pasanen, Toni P.
3 / 21 shared
Heinonen, Juha
1 / 2 shared
Chen, Kexun
3 / 7 shared
Ayvazyan, Karen
1 / 1 shared
Yli-Koski, Marko
1 / 7 shared
Pälikkö, Elmeri
1 / 1 shared
Chart of publication period
2024
2023
2022

Co-Authors (by relevance)

  • Ayvazyan, Gagik
  • Savin, Hele
  • Vardanyan, Arman
  • Hakhoyan, Levon
  • Seibt, Michael
  • Radfar, Behrad
  • Paulus, Simon
  • Niemeyer, Tobias
  • Schäfer, Sören
  • Koskinen, Vesa
  • Vähänissi, Ville
  • Kontermann, Stefan
  • Kearney, Patrick Mc
  • Mutschall, Doris
  • Serue, Michael
  • Pasanen, Hannu P.
  • Ali-Löytty, Harri
  • Khan, Ramsha
  • Tkachenko, Nikolai V.
  • Berencen, Yonder
  • Kentsch, Ulrich
  • Zhou, Shengqiang
  • Mc Kearney, Patrick
  • Punkkinen, Marko
  • Kuzmin, Mikhail
  • Kokko, Kalevi
  • Hakkarainen, Teemu
  • Viheriälä, Jukka
  • Guina, Mircea
  • Tukiainen, Antti
  • Laukkanen, Pekka
  • Setälä, Olli E.
  • Pasanen, Toni P.
  • Heinonen, Juha
  • Chen, Kexun
  • Ayvazyan, Karen
  • Yli-Koski, Marko
  • Pälikkö, Elmeri
OrganizationsLocationPeople

document

Bridging the gap between surface physics and photonics

  • Liu, Xiaolong
  • Punkkinen, Marko
  • Vähänissi, Ville
  • Savin, Hele
  • Radfar, Behrad
  • Kuzmin, Mikhail
  • Kokko, Kalevi
  • Hakkarainen, Teemu
  • Viheriälä, Jukka
  • Guina, Mircea
  • Tukiainen, Antti
  • Laukkanen, Pekka
Abstract

Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.

Topics
  • impedance spectroscopy
  • surface
  • simulation
  • semiconductor
  • defect