• Coffineau, Dorian
• Drouin, Dominique
• Ruediger, Andreas
• Manchon, Benoit
• Dawant, Raphael
• Gariépy, Nicolas
• Alibart, Fabien
• Jaouad, Abdelatif
• Grondin, Étienne

Abstract

<jats:title>Abstract</jats:title><jats:p>We report the fabrication of Hf<jats:sub>0.5</jats:sub>Zr<jats:sub>0.5</jats:sub>O<jats:sub>2</jats:sub> (HZO) based ferroelectric memory crosspoints using a CMOS-compatible damascene process. In this work, we compared 12 and 56 µm² crosspoint devices with the 0.02 mm² round devices commonly used as a benchmark. For all devices, a 9 nm thick ferroelectric thin film was deposited by plasma-enhanced atomic layer deposition (PEALD) on planarized bottom electrodes (BE). The wake-up appeared to be longer for the crosspoint memories compared to 0.02 mm² benchmark, while all the devices reached a 2P<jats:sub>r</jats:sub> value of ~ 50 µC/cm² after 10<jats:sup>5</jats:sup> cycles with 3 V/10 µs squared pulses. The crosspoints stand out for their superior endurance, which was increased by an order of magnitude. Nucleation limited switching (NLS) experiments were performed, revealing a switching time &lt; 170 ns for our 12 and 56 µm² devices, while it remained in the µs range for the larger round devices. The downscaled devices demonstrate notable advantages with a rise in endurance and switching speed.</jats:p>

Topics

• experiment
• thin film
• atomic layer deposition