| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bakkers, Erik
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germaniumcitations
- 2024Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germaniumcitations
- 2024Low Surface Recombination in Hexagonal SiGe Alloy Nanowirescitations
- 2024Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratiocitations
- 20242H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowirescitations
- 2023Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas
- 2021Single‐Shot Fabrication of Semiconducting–Superconducting Nanowire Devicescitations
- 2020In-plane selective area InSb–Al nanowire quantum networkscitations
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article
Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio
Abstract
<p>Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy. By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb<sub>1-x </sub>Sn<sub> x </sub>Te-based platform.</p>