| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Taliercio, Thierry
University of Montpellier
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Long indium-rich InGaAs nanowires by SAG-HVPE
- 2023THz time-domain spectroscopy modulated with semiconductor plasmonic perfect absorberscitations
- 2022Aluminum Bowties for Plasmonic‐Enhanced Infrared Sensingcitations
- 2022Quantum plasmonics and hyperbolic material for biosensing
- 2019Low pump irradiance to modulate THz waves driven by photogenerated carriers in an InAs slab
- 2019Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaicscitations
- 2018Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in watercitations
- 2004Carrier recombination processes in GaAsN: from the dilute limit to alloyingcitations
Places of action
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article
Long indium-rich InGaAs nanowires by SAG-HVPE
Abstract
International audience ; Abstract We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 μ m h −1 and high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy giving an average indium composition of 84%. This is consistent with the composition of 78% estimated from the photoluminescence spectrum of the NWs. Crystal structure analysis of the NWs by transmission electron microscopy indicated random stacking faults related to zinc-blende/wurtzite polytypism. This work demonstrates the ability of HVPE for growing high aspect ratio InGaAs NW arrays.