| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Saint-Girons, Guillaume
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Integration of epitaxial LiNbO3 thin films with silicon technologycitations
- 2024Reversible Single‐Pulse Laser‐Induced Phase Change of Sb 2 S 3 Thin Films: Multi‐Physics Modeling and Experimental Demonstrationscitations
- 2023Strain generated by the stacking faults in epitaxial SrO(SrTiO 3 ) N Ruddlesden–Popper structures
- 2021Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO 3 Transparent Thin Filmscitations
- 2021Spectroscopic ellipsometry: a sensitive tool to monitor domains formation during the bias enhanced nucleation of heteroepitaxial diamondcitations
- 2021Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical propertiescitations
- 2019Perovskite-oxide based hyperbolic metamaterialscitations
- 2019Poisson ratio and bulk lattice constant of (Sr 0.25 La 0.75 )CrO 3 from strained epitaxial thin filmscitations
- 2019Enhanced ferroelectricity in epitaxial Hf 0.5 Zr 0.5 O 2 thin films integrated with Si(001) using SrTiO 3 templatescitations
- 2016Epitaxy of SrTiO3 on Silicon: The Knitting Machine Strategycitations
- 2016Development of Epitaxial Oxide Ceramics Nanomaterials Based on Chemical Strategies on Semiconductor Platforms
- 2015Capping and decapping GaAs nanowires with As for preventing oxidation and for epitaxial shell growth
- 2014Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxycitations
- 2013LaAlO 3 /Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical propertiescitations
- 2010Oxides heterostructures for nanoelectronicscitations
- 2004Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networkscitations
Places of action
| Organizations | Location | People |
|---|
article
Integration of epitaxial LiNbO3 thin films with silicon technology
Abstract
International audience ; Development of bulk acoustic wave filters with ultra-wide passbands and operating at high frequencies for 5th and 6th generation telecommunication applications and micro-scale actuators, energy harvesters and sensors requires lead-free piezoelectric thin films with high electromechanical coupling and compatible with Si technology. In this paper, the epitaxial growth of 36°Y-X and 30°X-Y LiNbO3 films by direct liquid injection chemical vapor deposition on Si substrates by using epitaxial SrTiO3 layer, grown by molecular beam epitaxy, has been demonstrated. The stability of the interfaces and chemical interactions between SrTiO3, LiNbO3 and Si were studied experimentally and by thermodynamical calculations. The experimental conditions for pure 36°Y-X orientation growth have been optimized. The piezoelectricity of epitaxial 36°Y-LiNbO3/SrTiO3/Si films was confirmed by means of piezoelectric force microscopy measurements and the ferroelectric domain inversion was attained at 85 kV.cm-1 as expected for the nearly stoichiometric LiNbO3. According to the theoretical calculations, 36°Y-X LiNbO3 films on Si could offer an electromechanical coupling of 24.4% for thickness extension excitation of bulk acoustic waves and a comparable figure of merit of actuators and vibrational energy harvesters to that of standard PbZr1-xTixO3 films.